Improvement of the Quality of a GaN Epilayer by Employing a SiNx Interlayer
YANG De-Chao1, LIANG Hong-Wei2**, SONG Shi-Wei2, LIU Yang2, SHEN Ren-Sheng2, LUO Ying-Min2, ZHAO Hai-Feng3, DU Guo-Tong1,2**
1State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130023 2School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 3Key Laboratory of Excited State Processes, Changshun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033
Abstract：GaN epilayers with a porous SiNx interlayer were grown by metal-organic chemical vapor deposition on c-plane sapphire substrates. It is found that the crystalline qualities are significantly improved with SiNx growth. The improvement is attributed to the reduction of the density of threading dislocations (TDs) by an over-growth process of GaN grown on a SiNx interlayer. The influence mechanism of SiNx interlayers on GaN growth mode is also discussed.
. [J]. 中国物理快报, 2012, 29(8): 88102-088102.
YANG De-Chao, LIANG Hong-Wei, SONG Shi-Wei, LIU Yang, SHEN Ren-Sheng, LUO Ying-Min, ZHAO Hai-Feng, and DU Guo-Tong. Improvement of the Quality of a GaN Epilayer by Employing a SiNx Interlayer. Chin. Phys. Lett., 2012, 29(8): 88102-088102.
2012, Vol. 29 
