High Concentration InGaN/GaN Multi-Quantum Well Solar Cells with a Peak Open-Circuit Voltage of 2.45 V
ZHANG Dong-Yan1, 2, ZHENG Xin-He1**, LI Xue-Fei1, WU Yuan-Yuan1, WANG Jian-Feng1, YANG Hui1
1Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics (SINANO), Chinese Academy of Sciences, Suzhou 215125 2Graduate University of Chinese Academy of Sciences, Beijing 100190
High Concentration InGaN/GaN Multi-Quantum Well Solar Cells with a Peak Open-Circuit Voltage of 2.45 V
ZHANG Dong-Yan1, 2, ZHENG Xin-He1**, LI Xue-Fei1, WU Yuan-Yuan1, WANG Jian-Feng1, YANG Hui1
1Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics (SINANO), Chinese Academy of Sciences, Suzhou 215125 2Graduate University of Chinese Academy of Sciences, Beijing 100190
Abstract：We report InGaN/GaN multi-quantum well (MQW) solar cells with a comparatively high open-circuit voltage and good concentration properties. The open circuit voltage (Voc) keeps increasing logarithmically with concentration ratio until 60 suns. The peak Voc of InGaN/GaN MQW solar cells, which has a predominant peak wavelength of 456 nm from electroluminescence measurements, is found to be 2.45 V when the concentration ratio reaches 333×. Furthermore, the dependence of conversion efficiency and fill factor on concentration ratio are analyzed.
ZHANG Dong-Yan, ZHENG Xin-He, LI Xue-Fei, WU Yuan-Yuan, WANG Jian-Feng, YANG Hui. High Concentration InGaN/GaN Multi-Quantum Well Solar Cells with a Peak Open-Circuit Voltage of 2.45 V[J]. 中国物理快报, 2012, 29(6): 68801-068801.
ZHANG Dong-Yan, ZHENG Xin-He, LI Xue-Fei, WU Yuan-Yuan, WANG Jian-Feng, YANG Hui. High Concentration InGaN/GaN Multi-Quantum Well Solar Cells with a Peak Open-Circuit Voltage of 2.45 V. Chin. Phys. Lett., 2012, 29(6): 68801-068801.
2012, Vol. 29 
