Electrical Properties of Lead Zirconate Titanate Thick Film Containing Micro- and Nano-Crystalline Particles
LU Ran1,JIANG Gen-Shan2,LI Bin1,ZHAO Quan-Liang1,ZHANG De-Qing3,YUAN Jie4,CAO Mao-Sheng1**
1School of Material Science and Engineering, Beijing Institute of Technology, Beijing 100081 2North China Electric Power University, Baoding 071003 3College of Chemical Engineering, Qiqihar University, Qiqihar 161006 4School of Information Engineering, Central University for Nationalities, Beijing 100081
Electrical Properties of Lead Zirconate Titanate Thick Film Containing Micro- and Nano-Crystalline Particles
LU Ran1,JIANG Gen-Shan2,LI Bin1,ZHAO Quan-Liang1,ZHANG De-Qing3,YUAN Jie4,CAO Mao-Sheng1**
1School of Material Science and Engineering, Beijing Institute of Technology, Beijing 100081 2North China Electric Power University, Baoding 071003 3College of Chemical Engineering, Qiqihar University, Qiqihar 161006 4School of Information Engineering, Central University for Nationalities, Beijing 100081
摘要We report the ferroelectric, dielectric and piezoelectric properties of a dense and crack-free lead zirconate titanate (Pb(Zr0.52Ti0.48)O3, PZT) thick film containing micro− and nano-crystalline particles. The results show that these electrical properties are dependent strongly on the annealing temperature and film thickness. For the different-annealing-temperature and different-thickness films, the higher-annealing-temperature thicker ones show the larger remnant polarization and smaller coercive field. The dielectric results show that relative dielectric constant achieves the largest value at annealing temperature of 700°C, and increases with the increasing film thickness. For the piezoelectric properties, the longitudinal piezoelectric coefficient increases linearly with the film thickness increasing and the 4−µm -thick PZT film shows the largest value of about 200.65 pC/N. Therefore, the PZT thick films present good electric properties and enlarged potential in MEMS applications.
Abstract：We report the ferroelectric, dielectric and piezoelectric properties of a dense and crack-free lead zirconate titanate (Pb(Zr0.52Ti0.48)O3, PZT) thick film containing micro− and nano-crystalline particles. The results show that these electrical properties are dependent strongly on the annealing temperature and film thickness. For the different-annealing-temperature and different-thickness films, the higher-annealing-temperature thicker ones show the larger remnant polarization and smaller coercive field. The dielectric results show that relative dielectric constant achieves the largest value at annealing temperature of 700°C, and increases with the increasing film thickness. For the piezoelectric properties, the longitudinal piezoelectric coefficient increases linearly with the film thickness increasing and the 4−µm -thick PZT film shows the largest value of about 200.65 pC/N. Therefore, the PZT thick films present good electric properties and enlarged potential in MEMS applications.
2012, Vol. 29 
