摘要Aluminum nitride (AlN) ceramics are sintered by high-pressure technology at 5 GPa/30 min/1500–1800°C, using aluminum nitride powder produced by direct nitriding methods and CaC2(3wt%) powder as the starting material and sintering additive, respectively. The sample sintered at 1800°C shows relatively high density (99.09%) and thermal conductivity (113.7 W/(m⋅K). XRD patterns indicate that there are no obvious impurity phases in the sintered AlN sample. Observation of the microstructure by SEM shows that the AlN powder grows into full crystal grains with uniform size, the crystal particles are in a regular hexagonal structure, and the grain boundary phases are clean without gas phase. The results suggest that AlN ceramics sintered with CaC2 can achieve the desired microstructure and high thermal conductivity.
Abstract：Aluminum nitride (AlN) ceramics are sintered by high-pressure technology at 5 GPa/30 min/1500–1800°C, using aluminum nitride powder produced by direct nitriding methods and CaC2(3wt%) powder as the starting material and sintering additive, respectively. The sample sintered at 1800°C shows relatively high density (99.09%) and thermal conductivity (113.7 W/(m⋅K). XRD patterns indicate that there are no obvious impurity phases in the sintered AlN sample. Observation of the microstructure by SEM shows that the AlN powder grows into full crystal grains with uniform size, the crystal particles are in a regular hexagonal structure, and the grain boundary phases are clean without gas phase. The results suggest that AlN ceramics sintered with CaC2 can achieve the desired microstructure and high thermal conductivity.
LI Xiao-Lei**,WANG Li-Ying. The Microstructure and Thermal Conductivity of Aluminum Nitride Ceramics Sintered at High Pressure with CaC2[J]. 中国物理快报, 2012, 29(5): 50703-050703.
LI Xiao-Lei**,WANG Li-Ying. The Microstructure and Thermal Conductivity of Aluminum Nitride Ceramics Sintered at High Pressure with CaC2. Chin. Phys. Lett., 2012, 29(5): 50703-050703.
2012, Vol. 29 
