摘要A monolithic optoelectronic integrated circuit chip on a silicon-on-insulator is designed and fabricated based on complementary metal oxide semiconductor compatible technology. The chip integrates an optical Mach–Zehnder modulator (MZM) and a CMOS driving circuit with the amplification function. Test results show that the extinction ratio of the MZM is close to 20 dB and the small-signal gain of the CMOS driving circuit is about 26.9 dB. A 50 mV 10 MHz sine wave signal is amplified by the driving circuit, and then drives the MZM successfully.
Abstract：A monolithic optoelectronic integrated circuit chip on a silicon-on-insulator is designed and fabricated based on complementary metal oxide semiconductor compatible technology. The chip integrates an optical Mach–Zehnder modulator (MZM) and a CMOS driving circuit with the amplification function. Test results show that the extinction ratio of the MZM is close to 20 dB and the small-signal gain of the CMOS driving circuit is about 26.9 dB. A 50 mV 10 MHz sine wave signal is amplified by the driving circuit, and then drives the MZM successfully.
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2012, Vol. 29 
