THz Output Improvement in a Photomixer with a Resonant-Cavity-Enhanced Structure
DU Ming-Di,SUN Jun-Qiang**,CHENG Wen-Long
Wuhan National Laboratory for Optoelectronics, School of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074
THz Output Improvement in a Photomixer with a Resonant-Cavity-Enhanced Structure
DU Ming-Di,SUN Jun-Qiang**,CHENG Wen-Long
Wuhan National Laboratory for Optoelectronics, School of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074
摘要We carry out a detailed theoretical study on THz coherent generation in an LTG-GaAs photomixer with a resonant-cavity-enhanced (RCE) structure. In the structure, an improvement in THz output can be achieved by increasing the quantum efficiency. Under optimized structure parameters, the maximum quantum efficiency of the RCE photomixer is 93%, which is 2.82 times higher than that of the case without an RCE structure. The corresponding THz output ratio of the two structures is found to be about eight in the whole range of the lower frequency at the same incident optical power.
Abstract:We carry out a detailed theoretical study on THz coherent generation in an LTG-GaAs photomixer with a resonant-cavity-enhanced (RCE) structure. In the structure, an improvement in THz output can be achieved by increasing the quantum efficiency. Under optimized structure parameters, the maximum quantum efficiency of the RCE photomixer is 93%, which is 2.82 times higher than that of the case without an RCE structure. The corresponding THz output ratio of the two structures is found to be about eight in the whole range of the lower frequency at the same incident optical power.
DU Ming-Di,SUN Jun-Qiang**,CHENG Wen-Long. THz Output Improvement in a Photomixer with a Resonant-Cavity-Enhanced Structure[J]. 中国物理快报, 2012, 29(4): 44203-044203.
DU Ming-Di,SUN Jun-Qiang**,CHENG Wen-Long. THz Output Improvement in a Photomixer with a Resonant-Cavity-Enhanced Structure. Chin. Phys. Lett., 2012, 29(4): 44203-044203.
[1] Gregory I S, Tribe W R, Baker C, Cole B E, Evans M J, Spencer L, Pepper M and Missous M 2005 Appl. Phys. Lett. 86 204104[2] Kim N, Kim S P, Ko Y, Leem Y A, Ryu H C, Lee C W, Lee D, Jeon M Y, Noh S K and Park K H 2011 Opt. Express 19 15397[3] Baker C, Gregory I, Evans M, Tribe W, Linfield and Missous M 2005 Opt. Express 13 9639[4] Loka H S, Benjamin S D and Smith P W E D 1998 J. Quantum Electron. 34 1426[5] McIntosh K A, Nichols K B, Verghese S and Brown E R 1997 Appl. Phys. Lett. 70 354[6] Verghese S, Mcintosh K A and Brown E R 1997 Appl. Phys. Lett. 71 2743[7] Saeedkia D, Majedi A H, Safavi Naeini S and Mansour R R 2005 J. Quantum Electron. 41 234[8] Awad M, Nagel M, Kurz H, Herfort J and Ploog K 2007 Appl. Phys. Lett. 91 181124[9] Martin M, Michel M, Mike L, Detlef G and Peter K 2009 Photon. Technol. Lett. 21 146[10] Joseph A J and Yousef Z 1998 J. Quantum Electron. 34 1129[11] Gregory I S, Baker C, Tribe W R, Bradely I V, Evans M J, Linfield E H, Davies A G and Missous M 2005 J. Quantum Electron. 41 717[12] Soole J B D and Schumacher H 1990 Trans. Electron Devices 37 2285