摘要We present the actively Q−switched performance of Ho3+ in LSO crystal for operation at cryogenic and room temperature. For a cryogenic−temperature Q−switched Tm,Ho:LSO laser, a total incident diode power of 12.1 W is used to generate a maximum pulse energy of 1.15 mJ at a pulse repetition frequency (PRF) of 2 kHz (15.8 kW peak power). For a room-temperature Q−switched Ho:LSO laser pumped directly by a 1.91-µm Tm:YLF laser, the maximum average output power of 1.75 W and the shortest pulse width of 39 ns are achieved at a PRF of 5 kHz when the absorbed pump power is 12.2 W.
Abstract：We present the actively Q−switched performance of Ho3+ in LSO crystal for operation at cryogenic and room temperature. For a cryogenic−temperature Q−switched Tm,Ho:LSO laser, a total incident diode power of 12.1 W is used to generate a maximum pulse energy of 1.15 mJ at a pulse repetition frequency (PRF) of 2 kHz (15.8 kW peak power). For a room-temperature Q−switched Ho:LSO laser pumped directly by a 1.91-µm Tm:YLF laser, the maximum average output power of 1.75 W and the shortest pulse width of 39 ns are achieved at a PRF of 5 kHz when the absorbed pump power is 12.2 W.
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2012, Vol. 29 
