摘要A single-transistor CMOS active pixel image sensor (1 T CMOS APS) architecture is proposed. By switching the photosensing pinned diode, resetting and selecting can be achieved by diode pull-up and capacitive coupling pull-down of the source follower. Thus, the reset and selected transistors can be removed. In addition, the reset and selected signal lines can be shared to reduce the metal signal line, leading to a very high fill factor. The pixel design and operation principles are discussed in detail. The functionality of the proposed 1 T CMOS APS architecture has been experimentally verified using a fabricated chip in a standard 0.35 µm CMOS AMIS technology.
Abstract：A single-transistor CMOS active pixel image sensor (1 T CMOS APS) architecture is proposed. By switching the photosensing pinned diode, resetting and selecting can be achieved by diode pull-up and capacitive coupling pull-down of the source follower. Thus, the reset and selected transistors can be removed. In addition, the reset and selected signal lines can be shared to reduce the metal signal line, leading to a very high fill factor. The pixel design and operation principles are discussed in detail. The functionality of the proposed 1 T CMOS APS architecture has been experimentally verified using a fabricated chip in a standard 0.35 µm CMOS AMIS technology.
ZHANG Guo-An1, ZHANG Dong-Wei2, HE Jin1,2**, SU Yan-Mei2, WANG Cheng2, CHEN Qin2, LIANG Hai-Lang2, YE Yun2. A Single-Transistor Active Pixel CMOS Image Sensor Architecture[J]. 中国物理快报, 2012, 29(3): 30702-030702.
ZHANG Guo-An, ZHANG Dong-Wei, HE Jin, SU Yan-Mei, WANG Cheng, CHEN Qin, LIANG Hai-Lang, YE Yun. A Single-Transistor Active Pixel CMOS Image Sensor Architecture. Chin. Phys. Lett., 2012, 29(3): 30702-030702.
[1] Fossum F R 1995 IEEE International Electron Devices Meeting, Tech. Dig. (Pasadena, America December 1995) pp 17–25
[2] Agranov G, Gilton T, Mauritzson R, Boettiger U, Altice P, Shah J, Ladd J, Fan X, Brady F, Mackee J, Hong C, Li X and Patrick I 2005 Proc. IEEE Workshop on Charge Coupled Devices and Advanced Image Sensors (Nagano, Japan 2005) pp 206–209
[3] Mori M, Katsuno M, Kasuga S, Murata T and Yamaguchi T 2004 IEEE International Solid-State Circuits Conference, Tech. Dig. 1 110
[4] H Takahashi, M Kinoshita, K Morita, T Shirai, T Sato, T Kimura, H Yuzurihara and S Inoue IEEE International Solid-State Circuits Conference, Tech. Dig. 1 108
[5] Zhang D W, He F, Bermak A and Chan M 2010 The 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) p 1468
[6] Cho K B, Krymski A and Fossum E R 2000 IEEE International Solid-State Circuits Conference, Tech. Dig. p 114
[7] J Bong, Y Kwon, D Kim and K Min IEICE Electron. Express 6 304
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