Dislocation and Elastic Strain in an InN Film Characterized by Synchrotron Radiation X-Ray Diffraction and Rutherford Backscattering/Channeling
CHENG Feng-Feng1 , FA Tao1, WANG Xin-Qiang2, YAO Shu-De1**
1State Key Laboratory of Nuclear Physics and Technology, Peking University, Beijing 100871 2State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871
Dislocation and Elastic Strain in an InN Film Characterized by Synchrotron Radiation X-Ray Diffraction and Rutherford Backscattering/Channeling
CHENG Feng-Feng1 , FA Tao1, WANG Xin-Qiang2, YAO Shu-De1**
1State Key Laboratory of Nuclear Physics and Technology, Peking University, Beijing 100871 2State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871
摘要Dislocation information and strain-related tetragonal distortion as well as crystalline qualities of a 2-µm −thick InN film grown by molecular beam epitaxy (MBE) are characterized by Rutherford backscattering/channeling (RBS/C) and synchrotron radiation x-ray diffraction (SR-XRD). The minimum yield χmin=2.5% deduced from the RBS/C results indicates a fairly good crystalline quality. From the SR−XRD results, we obtain the values of the screw and edge densities to be ρscrew=7.0027×109 and ρedge=8.6115×109 cm−2, respectively. The tetragonal distortion of the sample is found to be −0.27% by angular scans, which is close to the −0.28% derived by SR-XRD. The value of |e⊥/e|| |=0.6742 implies that the InN layer is much stiffer along the a axis than that along the c axis, where e|| is the parallel elastic strain, and e⊥ is the perpendicular elastic strain. Photoluminescence results reveal a main peak of 0.653 eV with the linewidth of 60 meV, additional shoulder band could be due to impurities and related defects.
Abstract：Dislocation information and strain-related tetragonal distortion as well as crystalline qualities of a 2-µm −thick InN film grown by molecular beam epitaxy (MBE) are characterized by Rutherford backscattering/channeling (RBS/C) and synchrotron radiation x-ray diffraction (SR-XRD). The minimum yield χmin=2.5% deduced from the RBS/C results indicates a fairly good crystalline quality. From the SR−XRD results, we obtain the values of the screw and edge densities to be ρscrew=7.0027×109 and ρedge=8.6115×109 cm−2, respectively. The tetragonal distortion of the sample is found to be −0.27% by angular scans, which is close to the −0.28% derived by SR-XRD. The value of |e⊥/e|| |=0.6742 implies that the InN layer is much stiffer along the a axis than that along the c axis, where e|| is the parallel elastic strain, and e⊥ is the perpendicular elastic strain. Photoluminescence results reveal a main peak of 0.653 eV with the linewidth of 60 meV, additional shoulder band could be due to impurities and related defects.
(Rutherford backscattering (RBS), and other methods ofchemical analysis)
引用本文:
CHENG Feng-Feng1 , FA Tao1, WANG Xin-Qiang2, YAO Shu-De1**. Dislocation and Elastic Strain in an InN Film Characterized by Synchrotron Radiation X-Ray Diffraction and Rutherford Backscattering/Channeling[J]. 中国物理快报, 2012, 29(2): 26101-026101.
CHENG Feng-Feng , FA Tao, WANG Xin-Qiang, YAO Shu-De. Dislocation and Elastic Strain in an InN Film Characterized by Synchrotron Radiation X-Ray Diffraction and Rutherford Backscattering/Channeling. Chin. Phys. Lett., 2012, 29(2): 26101-026101.
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