Key Laboratory of Photonics Technology for Information, Key Laboratory for Physical Electronics and Devices (Ministry of Education), School of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an 710049
Escaped and Trapped Emission of Organic Light-Emitting Diodes
Key Laboratory of Photonics Technology for Information, Key Laboratory for Physical Electronics and Devices (Ministry of Education), School of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an 710049
摘要By locating the emitters around the first and second antinode of the metal electrode, the escaped and trapped emission of small molecule based bottom emission organic light-emitting diodes is investigated by using an integrating sphere, a fiber spectrometer and a glass hemisphere. It is found that the external coupling ratio by locating the emitters at the second antinode (at a distance of 220 nm from the cathode) is 70%, which is higher than that of an emitter at the first antinode (60 nm from the cathode) in theory and experiment. Extending the "half-space" dipole model by taking the dipole radiation pattern into account, we also calculate the optical coupling efficiency for the emitter at both the first and second antinode. Our experimental and theoretical results will benefit the optimization of device structures for the higher out-coupling efficiency.
Abstract:By locating the emitters around the first and second antinode of the metal electrode, the escaped and trapped emission of small molecule based bottom emission organic light-emitting diodes is investigated by using an integrating sphere, a fiber spectrometer and a glass hemisphere. It is found that the external coupling ratio by locating the emitters at the second antinode (at a distance of 220 nm from the cathode) is 70%, which is higher than that of an emitter at the first antinode (60 nm from the cathode) in theory and experiment. Extending the "half-space" dipole model by taking the dipole radiation pattern into account, we also calculate the optical coupling efficiency for the emitter at both the first and second antinode. Our experimental and theoretical results will benefit the optimization of device structures for the higher out-coupling efficiency.
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