摘要A systematic study of the charge transport and electrical properties in poly(3-hexylthiophene) (P3HT) polymer layers is performed. We demonstrate that the temperature-dependent current-voltage J(V,T) characteristics of hole−only devices based on P3HT can be accurately described using the recently introduced extended Gaussian disorder model (EGDM). A particular numerical method adopting the uneven discretization and Newton iteration method is used to solve the coupled equations describing the space-charge limited (SCL) current in conjugated polymers. For the polymer studied, we find the width of the density of states σ=0.1 eV and the lattice constant a=1.15 nm. Based on the numerical method and EGDM, we further calculate and analyze some important electrical properties for P3HT in detail, including the variation of current-voltage characteristics with the boundary carrier density and the distribution of charge-carrier density and electric field with the distance from interface.
Abstract：A systematic study of the charge transport and electrical properties in poly(3-hexylthiophene) (P3HT) polymer layers is performed. We demonstrate that the temperature-dependent current-voltage J(V,T) characteristics of hole−only devices based on P3HT can be accurately described using the recently introduced extended Gaussian disorder model (EGDM). A particular numerical method adopting the uneven discretization and Newton iteration method is used to solve the coupled equations describing the space-charge limited (SCL) current in conjugated polymers. For the polymer studied, we find the width of the density of states σ=0.1 eV and the lattice constant a=1.15 nm. Based on the numerical method and EGDM, we further calculate and analyze some important electrical properties for P3HT in detail, including the variation of current-voltage characteristics with the boundary carrier density and the distribution of charge-carrier density and electric field with the distance from interface.
WANG Li-Guo**;ZHANG Huai-Wu;TANG Xiao-Li;LI Yuan-Xun;ZHONG Zhi-Yong. Charge Transport and Electrical Properties in Poly(3-hexylthiophene) Polymer Layers[J]. 中国物理快报, 2012, 29(1): 17201-017201.
WANG Li-Guo**, ZHANG Huai-Wu, TANG Xiao-Li, LI Yuan-Xun, ZHONG Zhi-Yong. Charge Transport and Electrical Properties in Poly(3-hexylthiophene) Polymer Layers. Chin. Phys. Lett., 2012, 29(1): 17201-017201.
[1] Burroughes J H et al 1990 Nature 347 539
[2] Borchardt K 2004 Mater. Today 7 42
[3] Dong M S et al 2010 Chin. Phys. Lett. 27 127802
[4] Drury C J et al 1998 Appl. Phys. Lett. 73 108
[5] Wang H et al 2009 Chin. Phys. Lett. 26 118501
[6] Yu G, Gao J, Hummelen J C, Wudl F and Heeger A J 1995 Science 270 1789
[7] Yu H Z and Peng J B 2008 Chin. Phys. Lett. 25 1411
[8] Bao Z, Dodobalapor A and Lovinger A J 1996 Appl. Phys. Lett. 69 4108
[9] Sirringhaus H et al 1999 Nature 401 685
[10] Ma L 2010 Chin. Phys. Lett. 27 117301
[11] Clarke T M et al 2008 Adv. Funct. Mater. 18 4029
[12] Bässler H 1993 Phys. Status Solidi B 175 15
[13] Novikov S V et al 1998 Phys. Rev. Lett. 81 4472
[14] Martens H C F, Blom P W M and Schoo H F M 2000 Phys. Rev. B 61 7489
[15] Roichman Y and Tessler N 2003 Synth. Met. 135 443
[16] Tanase C, Meijer E J, Blom P W M and de Leeuw D M 2003 Phys. Rev. Lett. 91 216601
[17] Pasveer W F et al 2005 Phys. Rev. Lett. 94 206601
[18] Van Mensfoort S L M et al 2008 Phys. Rev. B 78 085208
[19] Preezant Y and Tessler N 2006 Phys. Rev. B 74 235202
[20] De Vries R J et al 2009 Appl. Phys. Lett. 94 163307
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