Density Increase of Upper Quantum Dots in Dual InGaN Quantum-Dot Layers
LV Wen-Bin, WANG Lai**, WANG Jia-Xing, HAO Zhi-Biao, LUO Yi
State Key Laboratory on Integrated Optoelectronics/Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084
Density Increase of Upper Quantum Dots in Dual InGaN Quantum-Dot Layers
LV Wen-Bin, WANG Lai**, WANG Jia-Xing, HAO Zhi-Biao, LUO Yi
State Key Laboratory on Integrated Optoelectronics/Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084
摘要Single and dual layers of InGaN quantum dots (QDs) are grown by metal organic chemical vapor deposition. In the former, the density, average height and diameter of QDs are 1.3×109 cm−2, 0.93 nm and 65.1 nm, respectively. The latter is grown under the same conditions and possesses a 20 nm low-temperature grown GaN barrier between two layers. The density, average height and diameter of QDs in the upper layer are 2.6×1010 cm−2, 4.6 nm and 81.3 nm, respectively. Two reasons are proposed to explain the QD density increase in the upper layer. First, the strain accumulation in the upper layer is higher, leading to a stronger three-dimensional growth. Second, the GaN barrier beneath the upper layer is so rough it induces growth QDs.
Abstract：Single and dual layers of InGaN quantum dots (QDs) are grown by metal organic chemical vapor deposition. In the former, the density, average height and diameter of QDs are 1.3×109 cm−2, 0.93 nm and 65.1 nm, respectively. The latter is grown under the same conditions and possesses a 20 nm low-temperature grown GaN barrier between two layers. The density, average height and diameter of QDs in the upper layer are 2.6×1010 cm−2, 4.6 nm and 81.3 nm, respectively. Two reasons are proposed to explain the QD density increase in the upper layer. First, the strain accumulation in the upper layer is higher, leading to a stronger three-dimensional growth. Second, the GaN barrier beneath the upper layer is so rough it induces growth QDs.
LV Wen-Bin;WANG Lai**;WANG Jia-Xing;HAO Zhi-Biao;LUO Yi
. Density Increase of Upper Quantum Dots in Dual InGaN Quantum-Dot Layers[J]. 中国物理快报, 2011, 28(12): 128101-128101.
LV Wen-Bin, WANG Lai**, WANG Jia-Xing, HAO Zhi-Biao, LUO Yi
. Density Increase of Upper Quantum Dots in Dual InGaN Quantum-Dot Layers. Chin. Phys. Lett., 2011, 28(12): 128101-128101.
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2011, Vol. 28 
