摘要Arsenic-doped petal-like zinc oxide microrods are grown on silicon (100) substrates by the chemical vapor deposition method without the use of catalysts. Scanning electron microscopy shows that As-doped petal-like ZnO microrods with a preferred c−axial orientation are obtained, which is well in accordance with x-ray diffraction analysis. The obtained ZnO microrods have uniform lengths of about 2 µm and side lengths of about 100 nm. As-related acceptor emissions are observed from photoluminescence spectra of the ZnO microrods at a temperature of 11 K. The acceptor binding energy is estimated to be 128 meV.
Abstract：Arsenic-doped petal-like zinc oxide microrods are grown on silicon (100) substrates by the chemical vapor deposition method without the use of catalysts. Scanning electron microscopy shows that As-doped petal-like ZnO microrods with a preferred c−axial orientation are obtained, which is well in accordance with x-ray diffraction analysis. The obtained ZnO microrods have uniform lengths of about 2 µm and side lengths of about 100 nm. As-related acceptor emissions are observed from photoluminescence spectra of the ZnO microrods at a temperature of 11 K. The acceptor binding energy is estimated to be 128 meV.
FENG Qiu-Ju**;JIANG Jun-Yan;TAO Peng-Cheng;LIU Shuang;XU Rui-Zhuo;LI Meng-Ke;SUN Jing-Chang
. The Fabrication and Characterization of Well Aligned Petal-Like Arsenic-Doped Zinc Oxide Microrods[J]. 中国物理快报, 2011, 28(10): 108103-108103.
FENG Qiu-Ju**, JIANG Jun-Yan, TAO Peng-Cheng, LIU Shuang, XU Rui-Zhuo, LI Meng-Ke, SUN Jing-Chang
. The Fabrication and Characterization of Well Aligned Petal-Like Arsenic-Doped Zinc Oxide Microrods. Chin. Phys. Lett., 2011, 28(10): 108103-108103.
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