Electric and Magnetic Field Tunable Rectification and Magnetoresistance in FexGe1−x/Ge Heterojunction Diodes
QIN Yu-Feng1,2, YAN Shi-Shen1, KANG Shi-Shou1, XIAO Shu-Qin1, LI Qiang1, DAI Zheng-Kun1, SHEN Ting-Ting1, DAI You-Yong1**, LIU Guo-Lei1, CHEN Yan-Xue1, MEI Liang-Mo1, ZHANG Ze3
1School of Physics, and National Key Laboratory of Crystal Materials, Shandong University, Jinan 250100 2Department of Physics, School of Information, Shandong Agricultural University, Taian 271018 3Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027
Electric and Magnetic Field Tunable Rectification and Magnetoresistance in FexGe1−x/Ge Heterojunction Diodes
QIN Yu-Feng1,2, YAN Shi-Shen1, KANG Shi-Shou1, XIAO Shu-Qin1, LI Qiang1, DAI Zheng-Kun1, SHEN Ting-Ting1, DAI You-Yong1**, LIU Guo-Lei1, CHEN Yan-Xue1, MEI Liang-Mo1, ZHANG Ze3
1School of Physics, and National Key Laboratory of Crystal Materials, Shandong University, Jinan 250100 2Department of Physics, School of Information, Shandong Agricultural University, Taian 271018 3Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027
摘要FexGe1−x/Ge amorphous heterojunction diodes with p-FexGe1−xferromagnetic semiconductor layers are grown on single-crystal Ge substrates of p-type, n-type and intrinsic semiconductors, respectively. The I–V curves of p−Fe0.4Ge0.6/p−Ge diodes only show slight changes with temperature or with magnetic field. For the p-Fe0.4Ge0.6/n−Ge diode, good rectification is maintained at room temperature. More interestingly, the I–V curve of the p−Fe0.4Ge0.6/i-Ge diode can be tuned by the magnetic field, indicating a large positive magnetoresistance. The resistances of the junctions decrease with the increasing temperature, suggesting a typical semiconductor transport behavior. The origin of the positive magnetoresistance is discussed based on the effect of the electric and magnetic field on the energy band structures of the interface.
Abstract：FexGe1−x/Ge amorphous heterojunction diodes with p-FexGe1−xferromagnetic semiconductor layers are grown on single-crystal Ge substrates of p-type, n-type and intrinsic semiconductors, respectively. The I–V curves of p−Fe0.4Ge0.6/p−Ge diodes only show slight changes with temperature or with magnetic field. For the p-Fe0.4Ge0.6/n−Ge diode, good rectification is maintained at room temperature. More interestingly, the I–V curve of the p−Fe0.4Ge0.6/i-Ge diode can be tuned by the magnetic field, indicating a large positive magnetoresistance. The resistances of the junctions decrease with the increasing temperature, suggesting a typical semiconductor transport behavior. The origin of the positive magnetoresistance is discussed based on the effect of the electric and magnetic field on the energy band structures of the interface.
QIN Yu-Feng;YAN Shi-Shen;KANG Shi-Shou;XIAO Shu-Qin;LI Qiang;DAI Zheng-Kun;SHEN Ting-Ting;DAI You-Yong**;LIU Guo-Lei;CHEN Yan-Xue;MEI Liang-Mo;ZHANG Ze
. Electric and Magnetic Field Tunable Rectification and Magnetoresistance in FexGe1−x/Ge Heterojunction Diodes[J]. 中国物理快报, 2011, 28(10): 107501-107501.
QIN Yu-Feng, YAN Shi-Shen, KANG Shi-Shou, XIAO Shu-Qin, LI Qiang, DAI Zheng-Kun, SHEN Ting-Ting, DAI You-Yong**, LIU Guo-Lei, CHEN Yan-Xue, MEI Liang-Mo, ZHANG Ze
. Electric and Magnetic Field Tunable Rectification and Magnetoresistance in FexGe1−x/Ge Heterojunction Diodes. Chin. Phys. Lett., 2011, 28(10): 107501-107501.
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