Demonstration of a High Open-Circuit Voltage GaN Betavoltaic Microbattery
CHENG Zai-Jun1, SAN Hai-Sheng1**, CHEN Xu-Yuan1,2**, LIU Bo3, FENG Zhi-Hong3
1 Pen-Tung Sah Micro-Nano Technology Research Center, Xiamen University, Xiamen 361005 2 Faculty of Science and Engineering, Vestfold University College, P.O. Box 2243, N-3103, Tønsberg, Norway 3 Science and Technology on ASIC Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang 050051
Demonstration of a High Open-Circuit Voltage GaN Betavoltaic Microbattery
CHENG Zai-Jun1, SAN Hai-Sheng1**, CHEN Xu-Yuan1,2**, LIU Bo3, FENG Zhi-Hong3
1 Pen-Tung Sah Micro-Nano Technology Research Center, Xiamen University, Xiamen 361005 2 Faculty of Science and Engineering, Vestfold University College, P.O. Box 2243, N-3103, Tønsberg, Norway 3 Science and Technology on ASIC Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang 050051
摘要A high open-circuit voltage betavoltaic microbattery based on a GaN p-i-n diode is demonstrated. Under the irradiation of a 4×4 mm2 planar solid 63Ni source with an activity of 2 mCi, the open−circuit voltage Voc of the fabricated single 2×2 mm2 cell reaches as high as 1.62 V, the short−circuit current density Jsc is measured to be 16nA/cm2. The microbattery has a fill factor of 55%, and the energy conversion efficiency of beta radiation into electricity reaches to 1.13%. The results suggest that GaN is a highly promising potential candidate for long-life betavoltaic microbatteries used as power supplies for microelectromechanical system devices.
Abstract：A high open-circuit voltage betavoltaic microbattery based on a GaN p-i-n diode is demonstrated. Under the irradiation of a 4×4 mm2 planar solid 63Ni source with an activity of 2 mCi, the open−circuit voltage Voc of the fabricated single 2×2 mm2 cell reaches as high as 1.62 V, the short−circuit current density Jsc is measured to be 16nA/cm2. The microbattery has a fill factor of 55%, and the energy conversion efficiency of beta radiation into electricity reaches to 1.13%. The results suggest that GaN is a highly promising potential candidate for long-life betavoltaic microbatteries used as power supplies for microelectromechanical system devices.
(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
引用本文:
CHENG Zai-Jun;SAN Hai-Sheng**;CHEN Xu-Yuan;**;LIU Bo;FENG Zhi-Hong
. Demonstration of a High Open-Circuit Voltage GaN Betavoltaic Microbattery[J]. 中国物理快报, 2011, 28(7): 78401-078401.
CHENG Zai-Jun, SAN Hai-Sheng**, CHEN Xu-Yuan, **, LIU Bo, FENG Zhi-Hong
. Demonstration of a High Open-Circuit Voltage GaN Betavoltaic Microbattery. Chin. Phys. Lett., 2011, 28(7): 78401-078401.
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