Investigation of a GaN Nucleation Layer on a Patterned Sapphire Substrate
WU Meng1,2**, ZENG Yi-Ping1,2,3, WANG Jun-Xi3, HU Qiang3
1Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 2Material Science Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 3Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
Investigation of a GaN Nucleation Layer on a Patterned Sapphire Substrate
WU Meng1,2**, ZENG Yi-Ping1,2,3, WANG Jun-Xi3, HU Qiang3
1Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 2Material Science Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 3Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
摘要A low-temperature GaN (LT-GaN) nucleation layer is grown on a patterned sapphire substrate (PSS) using metal-organic chemical vapor deposition (MOCVD). The surface morphology of the LT-GaN is investigated and the selective nucleation phenomenon in the growth process of the LT-GaN nucleation layer is discovered. Meanwhile, effects of thickness of the LT-GaN and the annealing process on the phenomenon are also discussed. A pattern model is also proposed to analyze the possible mechanisms in atomic scale.
Abstract：A low-temperature GaN (LT-GaN) nucleation layer is grown on a patterned sapphire substrate (PSS) using metal-organic chemical vapor deposition (MOCVD). The surface morphology of the LT-GaN is investigated and the selective nucleation phenomenon in the growth process of the LT-GaN nucleation layer is discovered. Meanwhile, effects of thickness of the LT-GaN and the annealing process on the phenomenon are also discussed. A pattern model is also proposed to analyze the possible mechanisms in atomic scale.
WU Meng;**;ZENG Yi-Ping;;WANG Jun-Xi;HU Qiang
. Investigation of a GaN Nucleation Layer on a Patterned Sapphire Substrate[J]. 中国物理快报, 2011, 28(6): 68502-068502.
WU Meng, **, ZENG Yi-Ping, , WANG Jun-Xi, HU Qiang
. Investigation of a GaN Nucleation Layer on a Patterned Sapphire Substrate. Chin. Phys. Lett., 2011, 28(6): 68502-068502.
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