摘要We prepare an etched gate tunable quantum dot in single-layer graphene and present transport measurement in this system. We extract the information of the ground states and excited states of the graphene quantum dot, as denoted by the presence of characteristic Coulomb blockade diamond diagrams. The results demonstrate that the quantum dot in single-layer graphene bodes well for future quantum transport study and quantum computing applications.
Abstract：We prepare an etched gate tunable quantum dot in single-layer graphene and present transport measurement in this system. We extract the information of the ground states and excited states of the graphene quantum dot, as denoted by the presence of characteristic Coulomb blockade diamond diagrams. The results demonstrate that the quantum dot in single-layer graphene bodes well for future quantum transport study and quantum computing applications.
(Magnetic properties of monolayers and thin films)
引用本文:
WANG Lin-Jun;CAO Gang;TU Tao**;LI Hai-Ou;ZHOU Cheng;HAO Xiao-Jie;GUO Guang-Can;GUO Guo-Ping**
. Ground States and Excited States in a Tunable Graphene Quantum Dot[J]. 中国物理快报, 2011, 28(6): 67301-067301.
WANG Lin-Jun, CAO Gang, TU Tao**, LI Hai-Ou, ZHOU Cheng, HAO Xiao-Jie, GUO Guang-Can, GUO Guo-Ping**
. Ground States and Excited States in a Tunable Graphene Quantum Dot. Chin. Phys. Lett., 2011, 28(6): 67301-067301.
[1] Hanson R, Kouwenhoven L P, Petta J R, Tarucha S and Vandersypen L M K 2007 Rev. Mod. Phys. 79 1217
[2] Hanson R and Awschalom D 2008 Nature 453 1043
[3] Taylor J M, Engel H A, Dur W, Yacoby A, Marcus C M, Zoller P and Lukin M D 2005 Nature Phys. 1 177
[4] Lin Z R, Guo G P, Tu. T, Zhu F Y and Guo G C 2008 Phys. Rev. Lett. 101 230501
[5] Fischer J and Loss D 2009 Science 324 1277
[6] Trauzettel B, Bulaev D V, Loss D and Burkard G 2007 Nature Phys. 3 192
[7] Guo G P, Lin Z R, Tu T, Li X P and Guo G C 2009 New J. Phys. 11 123005
[8] Castro Neto A H, Guinea F, Peres N M R, Novoselov K S and Geim A K 2009 Rev. Mod. Phys. 81 109
[9] Silvestrov P G and Efetov K B 2007 Phys. Rev. Lett. 98 016802
[10] Pereira Jr J M, Vasilopoulos P and Peeters F M 2007 Nano Lett. 7 946
[11] Recher P, Nilsson J, Burkard G and Trauzettel B 2009 Phys. Rev. B 79 085407
[12] Martino A D, Dell'Anna L and Egger R 2007 Phys. Rev. Lett. 98 066802
[13] Ponomarenko L, Schedin F, Katsnelson M, Yang R, Hill E, Novoselov K and Geim A 2008 Science 320 356
[14] Stampfer C, Schurtenberger E, Molitor F, Guettinger J, Ihn T and Ensslin K 2008 Nano Lett. 8 2378
[15] Cao G, Li H O, Tu T, Zhou C, Hao X J, Guo G C and Guo G P 2009 Chin. Phys. Lett. 26 097302
[16] Zhu F Y, Hao X J, Tu. T, Guo G C and Guo G P 2009 Chin. Phys. Lett. 26 050301
[17] Wang L J, Cao G, Tu T, Li H O, Zhou C, Hao X J, Su Z, Guo G C, Jiang H W and Guo G P 2010 Appl. Phys. Lett. 97 262113
[18] Marcus C M, McEuen P L, Tarucha S, Westervelt R M and Wingreen N 1997 NATO ASI Conference Proceedings ed Sohn L L, Kouwenhoven L P and Schon G (Dordrecht: Kluwe)
[19] Gelmont B, Shur M S, and Mattauch R J 1995 Solid-State Electron. 38 731
2011, Vol. 28 
