中国物理快报  2011, Vol. 28 Issue (5): 57102-057102    DOI: 10.1088/0256-307X/28/5/057102
  CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES 本期目录 | 过刊浏览 | 高级检索 |
Improved AlGaN/GaN HEMTs Grown on Si Substrates Using Stacked AlGaN/AlN Interlayer by MOCVD
WANG Yong1,2**, YU Nai-Sen2, LI Ming2, LAU Kei-May2
1National Key Lab on High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022
2Photonics Technology Center, Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong
Improved AlGaN/GaN HEMTs Grown on Si Substrates Using Stacked AlGaN/AlN Interlayer by MOCVD
WANG Yong1,2**, YU Nai-Sen2, LI Ming2, LAU Kei-May2
1National Key Lab on High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022
2Photonics Technology Center, Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong