Improved AlGaN/GaN HEMTs Grown on Si Substrates Using Stacked AlGaN/AlN Interlayer by MOCVD
WANG Yong1,2**, YU Nai-Sen2, LI Ming2, LAU Kei-May2
1National Key Lab on High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022 2Photonics Technology Center, Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong
Improved AlGaN/GaN HEMTs Grown on Si Substrates Using Stacked AlGaN/AlN Interlayer by MOCVD
WANG Yong1,2**, YU Nai-Sen2, LI Ming2, LAU Kei-May2
1National Key Lab on High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022 2Photonics Technology Center, Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong
摘要AlGaN/GaN high electron mobility transistors (HEMTs) are grown on 2-inch Si (111) substrates by MOCVD. The stacked AlGaN/AlN interlayer with different AlGaN thickness and indium surfactant doped is designed and optimized to relieve the tensile stress during GaN epitaxial growth. The top 1.0 µm GaN buffer layer grown on the optimized AlGaN/AlN interlayer shows a crack-free and shining surface. The XRD results show that GaN(002) FWHM is 480 arcsec and GaN(102) FWHM is 900 arcsec. The AGaN/GaN HEMTs with optimized and non-optimized AlGaN/AlN interlayer are grown and processed for comparison and the dc and rf characteristics are characterized. For the dc characteristics of the device with optimized AlGaN/AlN interlayer, maximum drain current density Idss of 737 mA/mm, peak transconductance Gm of 185 mS/mm, drain leakage current density Ids of 1.7 µA/mm, gate leakage current density Igs of 24.8 µA/mm and off−state breakdown voltage VBR of 67 V are achieved with Lg/Wg/Lgs/Lgd = 1/10/1/1 µm. For the small signal rf characteristics of the device with optimized AlGaN/AlN interlayer, current gain cutoff frequency fT of 8.3 GHz and power gain cutoff frequency fmax of 19.9 GHz are achieved with Lg/Wg/Lgs/Lgd=1/100/1/1 µm. Furthermore, the best rf performance with fT of 14.5 GHz and fmax of 37.3 GHz is achieved with a reduced gate length of 0.7 µm.
Abstract：AlGaN/GaN high electron mobility transistors (HEMTs) are grown on 2-inch Si (111) substrates by MOCVD. The stacked AlGaN/AlN interlayer with different AlGaN thickness and indium surfactant doped is designed and optimized to relieve the tensile stress during GaN epitaxial growth. The top 1.0 µm GaN buffer layer grown on the optimized AlGaN/AlN interlayer shows a crack-free and shining surface. The XRD results show that GaN(002) FWHM is 480 arcsec and GaN(102) FWHM is 900 arcsec. The AGaN/GaN HEMTs with optimized and non-optimized AlGaN/AlN interlayer are grown and processed for comparison and the dc and rf characteristics are characterized. For the dc characteristics of the device with optimized AlGaN/AlN interlayer, maximum drain current density Idss of 737 mA/mm, peak transconductance Gm of 185 mS/mm, drain leakage current density Ids of 1.7 µA/mm, gate leakage current density Igs of 24.8 µA/mm and off−state breakdown voltage VBR of 67 V are achieved with Lg/Wg/Lgs/Lgd = 1/10/1/1 µm. For the small signal rf characteristics of the device with optimized AlGaN/AlN interlayer, current gain cutoff frequency fT of 8.3 GHz and power gain cutoff frequency fmax of 19.9 GHz are achieved with Lg/Wg/Lgs/Lgd=1/100/1/1 µm. Furthermore, the best rf performance with fT of 14.5 GHz and fmax of 37.3 GHz is achieved with a reduced gate length of 0.7 µm.
(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
引用本文:
WANG Yong;**;YU Nai-Sen;LI Ming;LAU Kei-May
. Improved AlGaN/GaN HEMTs Grown on Si Substrates Using Stacked AlGaN/AlN Interlayer by MOCVD[J]. 中国物理快报, 2011, 28(5): 57102-057102.
WANG Yong, **, YU Nai-Sen, LI Ming, LAU Kei-May
. Improved AlGaN/GaN HEMTs Grown on Si Substrates Using Stacked AlGaN/AlN Interlayer by MOCVD. Chin. Phys. Lett., 2011, 28(5): 57102-057102.
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