摘要The strain in GaN epitaxial layers grown on 6H-SiC substrates with an AlN buffer by metalorganic chemical vapor deposition is investigated. It is found that the insertion of a graded AlGaN layer between the GaN layer and the AlN buffer can change the signs of strain. A compressive strain in an overgrown thick (2 µm) GaN layer is obtained. High-resolution x-ray diffraction, Raman spectroscopy and photoluminescence measurements are used to determine the strain state in the GaN layers. The mechanism of stress control by inserting graded AlGaN in subsequent GaN layers is discussed briefly.
Abstract：The strain in GaN epitaxial layers grown on 6H-SiC substrates with an AlN buffer by metalorganic chemical vapor deposition is investigated. It is found that the insertion of a graded AlGaN layer between the GaN layer and the AlN buffer can change the signs of strain. A compressive strain in an overgrown thick (2 µm) GaN layer is obtained. High-resolution x-ray diffraction, Raman spectroscopy and photoluminescence measurements are used to determine the strain state in the GaN layers. The mechanism of stress control by inserting graded AlGaN in subsequent GaN layers is discussed briefly.
CHEN Yao**;JIANG Yang;XU Pei-Qiang;MA Zi-Guang;WANG Xiao-Li;WANG Lu;JIA Hai-Qiang;CHEN Hong
. Stress Control in GaN Grown on 6H-SiC by Metalorganic Chemical Vapor Deposition[J]. 中国物理快报, 2011, 28(4): 48101-048101.
CHEN Yao**, JIANG Yang, XU Pei-Qiang, MA Zi-Guang, WANG Xiao-Li, WANG Lu, JIA Hai-Qiang, CHEN Hong
. Stress Control in GaN Grown on 6H-SiC by Metalorganic Chemical Vapor Deposition. Chin. Phys. Lett., 2011, 28(4): 48101-048101.
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2011, Vol. 28 
