摘要Spectral resolution effects on the lineshape of photoreflectance (PR) spectroscopy is experimentally investigated. PR measurements are performed on HgCdTe epilayer and InAs/GaAs quantum dot (QD) low-dimensional samples at low temperatures in a spectral resolution range from 8 to 0.5 meV. The results indicate that the resolution affects not only the identification of narrow PR features, but also the determination of critical-point energies of identified PR features, and a spectral resolution of as high as 0.5 meV may be necessary for low-dimensional semiconductors. The spectral resolution is indeed a crucial parameter, for which the step-scan Fourier transform infrared spectrometer-based PR technique is preferable.
Abstract：Spectral resolution effects on the lineshape of photoreflectance (PR) spectroscopy is experimentally investigated. PR measurements are performed on HgCdTe epilayer and InAs/GaAs quantum dot (QD) low-dimensional samples at low temperatures in a spectral resolution range from 8 to 0.5 meV. The results indicate that the resolution affects not only the identification of narrow PR features, but also the determination of critical-point energies of identified PR features, and a spectral resolution of as high as 0.5 meV may be necessary for low-dimensional semiconductors. The spectral resolution is indeed a crucial parameter, for which the step-scan Fourier transform infrared spectrometer-based PR technique is preferable.
(Infrared spectrometers, auxiliary equipment, and techniques)
引用本文:
MA Li-Li;SHAO Jun**;LÜXiang;GUO Shao-Ling;LU Wei**
. Spectral Resolution Effects on the Lineshape of Photoreflectance[J]. 中国物理快报, 2011, 28(4): 47801-047801.
MA Li-Li, SHAO Jun**, LÜ, Xiang, GUO Shao-Ling, LU Wei**
. Spectral Resolution Effects on the Lineshape of Photoreflectance. Chin. Phys. Lett., 2011, 28(4): 47801-047801.
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2011, Vol. 28 
