Microwave Absorption Properties of Ni-Foped SiC Powders in the 2–18GHz Frequency Range
JIN Hai-Bo1**, LI Dan1, CAO Mao-Sheng1, DOU Yan-Kun1, CHEN Tao1, WEN Bo1, Simeon Agathopoulos2
1School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081 2Department of Materials Science and Engineering, University of Ioannina, GR-45110 Ioannina, Greece
Microwave Absorption Properties of Ni-Foped SiC Powders in the 2–18GHz Frequency Range
JIN Hai-Bo1**, LI Dan1, CAO Mao-Sheng1, DOU Yan-Kun1, CHEN Tao1, WEN Bo1, Simeon Agathopoulos2
1School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081 2Department of Materials Science and Engineering, University of Ioannina, GR-45110 Ioannina, Greece
摘要Ni-doped SiC powder with improved dielectric and microwave absorption properties was prepared by self-propagating high-temperature synthesis (SHS). The XRD analysis of the as-synthesized powders suggests that Ni is accommodated in the sites of Si in the lattice of SiC, which shrinks in the presence of Ni. The experimental results show an improvement in the dielectric properties of the Ni-doped SiC powder in the frequency range of 2–18 GHz. The bandwidth of the reflection loss below −10 dB is broadened from 3.04 (for pure SiC) to 4.56 GHz (for Ni-doped SiC), as well as the maximum reflection loss of produced powders from 13.34 to 22.57 dB, indicating that Ni-doped SiC could be used as an effective microwave absorption material.
Abstract：Ni-doped SiC powder with improved dielectric and microwave absorption properties was prepared by self-propagating high-temperature synthesis (SHS). The XRD analysis of the as-synthesized powders suggests that Ni is accommodated in the sites of Si in the lattice of SiC, which shrinks in the presence of Ni. The experimental results show an improvement in the dielectric properties of the Ni-doped SiC powder in the frequency range of 2–18 GHz. The bandwidth of the reflection loss below −10 dB is broadened from 3.04 (for pure SiC) to 4.56 GHz (for Ni-doped SiC), as well as the maximum reflection loss of produced powders from 13.34 to 22.57 dB, indicating that Ni-doped SiC could be used as an effective microwave absorption material.
(Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials)
引用本文:
JIN Hai-Bo**;LI Dan;CAO Mao-Sheng;DOU Yan-Kun;CHEN Tao;WEN Bo;Simeon Agathopoulos
. Microwave Absorption Properties of Ni-Foped SiC Powders in the 2–18GHz Frequency Range[J]. 中国物理快报, 2011, 28(3): 37701-037701.
JIN Hai-Bo**, LI Dan, CAO Mao-Sheng, DOU Yan-Kun, CHEN Tao, WEN Bo, Simeon Agathopoulos
. Microwave Absorption Properties of Ni-Foped SiC Powders in the 2–18GHz Frequency Range. Chin. Phys. Lett., 2011, 28(3): 37701-037701.
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