摘要We report the first observation of up-conversion photostimulated luminescence in non-doped Mg2SnO4. Stimulated by 980 nm infrared laser (reading) after ultraviolet irradiation (writing), the phosphor shows photostimulated emission band covering 470–550 nm, which is due to the recombination of F centers with holes. After ceasing ultraviolet irradiation, the storage intensity would rapidly decrease to 59% of its original storage intensity in 2.5 h and then would not degrade anymore. It is suggested that the Mg2SnO4 has potential applications for optical storage. Accordingly, the possible photostimulated luminescence mechanisms of Mg2SnO4 are proposed.
Abstract：We report the first observation of up-conversion photostimulated luminescence in non-doped Mg2SnO4. Stimulated by 980 nm infrared laser (reading) after ultraviolet irradiation (writing), the phosphor shows photostimulated emission band covering 470–550 nm, which is due to the recombination of F centers with holes. After ceasing ultraviolet irradiation, the storage intensity would rapidly decrease to 59% of its original storage intensity in 2.5 h and then would not degrade anymore. It is suggested that the Mg2SnO4 has potential applications for optical storage. Accordingly, the possible photostimulated luminescence mechanisms of Mg2SnO4 are proposed.
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2011, Vol. 28 
