Anomalous Temperature Dependence of Photoluminescence in InAs/InAlGaAs/InP Quantum Wire and Dot Hybrid Nanostructures
YANG Xin-Rong1**, XU Bo2, WANG Hai-Fei1, ZHAO Guo-Qing1, SHI Shu-Hui1, SHEN Xiao-Zhi1, LI Jun-Feng1, WANG Zhan-Guo2
1Department of Physics and Electronic Engineering, Handan College, Handan 056005 2Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083
Anomalous Temperature Dependence of Photoluminescence in InAs/InAlGaAs/InP Quantum Wire and Dot Hybrid Nanostructures
YANG Xin-Rong1**, XU Bo2, WANG Hai-Fei1, ZHAO Guo-Qing1, SHI Shu-Hui1, SHEN Xiao-Zhi1, LI Jun-Feng1, WANG Zhan-Guo2
1Department of Physics and Electronic Engineering, Handan College, Handan 056005 2Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083
摘要Self-assembled InAs quantum wires (QWRs) are fabricated on an InP substrate by solid-source molecular beam epitaxy (SSMBE). Photoluminescence (PL) spectra are investigated in these nanostructures as a function of temperature. An anomalous enhancement of PL intensity and a temperature insensitive PL emission are observed from InAs nanostructures grown on InP substrates using InAlGaAs as the matrix layer and the origin of this phenomenon is discussed. We attribute the anomalous temperature dependence of photoluminescence to the formation of Al-rich and In-rich region in the InAlGaAs buffer layer and the cap layer.
Abstract：Self-assembled InAs quantum wires (QWRs) are fabricated on an InP substrate by solid-source molecular beam epitaxy (SSMBE). Photoluminescence (PL) spectra are investigated in these nanostructures as a function of temperature. An anomalous enhancement of PL intensity and a temperature insensitive PL emission are observed from InAs nanostructures grown on InP substrates using InAlGaAs as the matrix layer and the origin of this phenomenon is discussed. We attribute the anomalous temperature dependence of photoluminescence to the formation of Al-rich and In-rich region in the InAlGaAs buffer layer and the cap layer.
YANG Xin-Rong**;XU Bo;WANG Hai-Fei;ZHAO Guo-Qing;SHI Shu-Hui;SHEN Xiao-Zhi;LI Jun-Feng;WANG Zhan-Guo
. Anomalous Temperature Dependence of Photoluminescence in InAs/InAlGaAs/InP Quantum Wire and Dot Hybrid Nanostructures[J]. 中国物理快报, 2011, 28(2): 27801-027801.
YANG Xin-Rong**, XU Bo, WANG Hai-Fei, ZHAO Guo-Qing, SHI Shu-Hui, SHEN Xiao-Zhi, LI Jun-Feng, WANG Zhan-Guo
. Anomalous Temperature Dependence of Photoluminescence in InAs/InAlGaAs/InP Quantum Wire and Dot Hybrid Nanostructures. Chin. Phys. Lett., 2011, 28(2): 27801-027801.
[1] Nötzel R, Anantathanasarn S, van Veldhoven R P J et al 2006 Jpn. J. Appl. Phys. 45 6544
[2] Reithmaier J P, Somers A, Deubert S, Schwertberger R et al 2005 J. Phys. D: Appl. Phys. 38 2088
[3] Bierwagen O and Masselink W T 2005 Appl. Phys. Lett. 86 113110
[4] Jin S K, Jin H L, Sung U H and Won S H 2004 Appl. Phys. Lett. 85 1033
[5] Lelarge F, Rousseau B, Dagens B and Poingt F 2005 IEEE Photon. Technol. Lett. 17 1369
[6] Kim H D, Jeong W G and Lee J H 2005 Appl. Phys. Lett. 87 083110
[7] Yang X R, Xu B, Wang Z G and Jin P 2006 Electron. Lett. 42 757
[8] Brusaferri L, Sanguinetti S, Grilli E et al 1996 Appl. Phys. Lett. 69 3354
[9] Xu Z Y, Lu Z D, Yang X P and Yuan Z L 1996 Phys. Rev. B 54 11528
[10] Zhang Y C, Huang C J, Liu F Q, Xu B and Wang Z G 2001 J. Appl. Phys. 90 1973
[11] Jiang W H, Ye X L, Xu B, Xu H Z, Ding D, Liang J B and Wang Z G 2000 J. Appl. Phys. 88 2529
[12] Lubyshev D I, Gonza'lez-Borrero P P and E Marega 1996 Appl. Phys. Lett. 68 205
[13] Huffaker D L and Deppe D G 1998 Appl. Phys. Lett. 73 366
[14] Kissel H, Müller U, Waltherand C and Masselink W T 2000 Phys. Rev. B 62 7213
[15] Wohlert D E, Chou S T, Chen A C, Cheng K Y and Hsieh K C 1996 Appl. Phys. Lett. 68 2386
[16] Mukai K and Sugawara M 1999 Appl. Phys. Lett. 74 3963
[17] Lei W, Chen Y H, Xu B, Jin P and Wang Z G 2006 Solid State Commun. 137 606
[18] Sanguinetti S, Henini M, Grassi Alessi M, Capizzi M, Frigeri P and Franchi S 1999 Phys. Rev. B 60 8276
[19] Gammon D, Rudin S, Reincke T L, Katzer D S and Kyono C S 1995 Phys. Rev. B 51 16785
[20] Miyake Y, Hirayama H, Kudo K and Tamura S 1993 IEEE J. Quantum Electron. 29 2123
[21] Kwack H S, Sun Y P and Cho Y H 2003 Appl. Phys. Lett. 83 2901
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