摘要Room-temperature Tm:Ho:GdVO4 microchip laser operated around 2 μm is demonstrated for the first time to our knowledge. At a heat sink temperature of 283 K, maximum output power of 29.7 mW is obtained by using a 0.25−mm-long crystal at an absorbed pump power of 912 mW, corresponding to a slope efficiency of 5.0%. At the temperature to 283 K, a single-longitudinal-mode laser as much as 8mW at 2048.5 nm is achieved. The M2 factor is measured to be 1.4.
Abstract：Room-temperature Tm:Ho:GdVO4 microchip laser operated around 2 μm is demonstrated for the first time to our knowledge. At a heat sink temperature of 283 K, maximum output power of 29.7 mW is obtained by using a 0.25−mm-long crystal at an absorbed pump power of 912 mW, corresponding to a slope efficiency of 5.0%. At the temperature to 283 K, a single-longitudinal-mode laser as much as 8mW at 2048.5 nm is achieved. The M2 factor is measured to be 1.4.
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2011, Vol. 28 
