Flashover in Back-Triggered Photoconductive Semiconductor Switch
SHI Wei1,2**, JIA Ji-Qiang1, JI Wei-Li1, GUI Huai-Meng1
1Applied Physics Department, Xi'an University of Technology, Xi'an 710048 2State Key Laboratory of Electrical Insulation for Power Equipment, Xi'an Jiaotong University, Xi'an 710049
Flashover in Back-Triggered Photoconductive Semiconductor Switch
SHI Wei1,2**, JIA Ji-Qiang1, JI Wei-Li1, GUI Huai-Meng1
1Applied Physics Department, Xi'an University of Technology, Xi'an 710048 2State Key Laboratory of Electrical Insulation for Power Equipment, Xi'an Jiaotong University, Xi'an 710049
摘要Design of a new type of photoconductive semiconductor switches (PCSSs) is presented, and the withstand voltage is improved. The flashover voltage of the back-triggered PCSS is found to be higher than that of the front-triggered one. By analyzing the differences of the flashover voltage between the back-triggered PCSS and the front-triggered PCSS, a detailed statistics analysis and theoretical explanation are expounded. The experiments also prove that the PCSS we developed could resist a voltage as high as 20 kV under the repetition frequency of 30 Hz.
Abstract：Design of a new type of photoconductive semiconductor switches (PCSSs) is presented, and the withstand voltage is improved. The flashover voltage of the back-triggered PCSS is found to be higher than that of the front-triggered one. By analyzing the differences of the flashover voltage between the back-triggered PCSS and the front-triggered PCSS, a detailed statistics analysis and theoretical explanation are expounded. The experiments also prove that the PCSS we developed could resist a voltage as high as 20 kV under the repetition frequency of 30 Hz.
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2011, Vol. 28 
