Effect of Indium Ambient on Electrical Properties of Mg-Doped AlxGa1-xN
XU Zheng-Yu1, QIN Zhi-Xin1**, SANG Li-Wen1, ZHANG Yan-Zhao1, SHEN Bo1, ZHANG Guo-Yi1, ZHAO Lan2, ZHANG Xiang-Feng2, CHENG Cai-Jing2, SUN Wei-Guo2
1State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 2Luoyang Optoelectronic Institute, PO. Box 030, Luoyang 471009
Effect of Indium Ambient on Electrical Properties of Mg-Doped AlxGa1-xN
XU Zheng-Yu1, QIN Zhi-Xin1**, SANG Li-Wen1, ZHANG Yan-Zhao1, SHEN Bo1, ZHANG Guo-Yi1, ZHAO Lan2, ZHANG Xiang-Feng2, CHENG Cai-Jing2, SUN Wei-Guo2
1State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 2Luoyang Optoelectronic Institute, PO. Box 030, Luoyang 471009
摘要Mg-doped AlxGa1−xN epilayers were grown on AlN/sapphire templates by metal organic chemical vapor deposition (MOCVD) using an indium-assisted growth method. At room temperature, the resistivity of Mg-doped Al0.43Ga0.57N epilayer grown under indium (In) ambient is of the order of 104 Ω⋅cm, while the resistivity of Mg−doped Al0.43Ga0.57N grown without In assistance is of the order of 106 Ω⋅cm. The ultraviolet light−emitting diodes (UV-LEDs) using the In-assisted Mg-doped Al0.43Ga0.57N as the p−type layers were fabricated to verify the function of indium ambient. It is found that there are a lower turn-on voltage and a lower diode series resistance in the UV-LEDs fabricated with p-type Al0.43Ga0.57N layers grown under In-ambient.
Abstract：Mg-doped AlxGa1−xN epilayers were grown on AlN/sapphire templates by metal organic chemical vapor deposition (MOCVD) using an indium-assisted growth method. At room temperature, the resistivity of Mg-doped Al0.43Ga0.57N epilayer grown under indium (In) ambient is of the order of 104 Ω⋅cm, while the resistivity of Mg−doped Al0.43Ga0.57N grown without In assistance is of the order of 106 Ω⋅cm. The ultraviolet light−emitting diodes (UV-LEDs) using the In-assisted Mg-doped Al0.43Ga0.57N as the p−type layers were fabricated to verify the function of indium ambient. It is found that there are a lower turn-on voltage and a lower diode series resistance in the UV-LEDs fabricated with p-type Al0.43Ga0.57N layers grown under In-ambient.
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2010, Vol. 27 
