摘要Effects of dopant properties on microstructures and the electrical characteristics of poly (3-hexylthiophene) (P3HT) films are studied by doping 0.1 wt% 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4−TCNQ), 6,6-phenyl-C61butyric acid methyl ester (PCBM) and N,N'−Diphenyl-N,N'-(m-tolyl)-benzidine (TPD) into P3HT, respectively. The introductions of various dopants in small quantities increase the field-effect mobility and the I on/Ioff ratio of P3HT thin-film transistors. However, each of dopants shows various effects on the crystalline order and the molecular orientation of P3HT films and the performance of P3HT thin-film transistors. These can be attributed to the various size, shape and energy-level properties of the dopants.
Abstract：Effects of dopant properties on microstructures and the electrical characteristics of poly (3-hexylthiophene) (P3HT) films are studied by doping 0.1 wt% 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4−TCNQ), 6,6-phenyl-C61butyric acid methyl ester (PCBM) and N,N'−Diphenyl-N,N'-(m-tolyl)-benzidine (TPD) into P3HT, respectively. The introductions of various dopants in small quantities increase the field-effect mobility and the I on/Ioff ratio of P3HT thin-film transistors. However, each of dopants shows various effects on the crystalline order and the molecular orientation of P3HT films and the performance of P3HT thin-film transistors. These can be attributed to the various size, shape and energy-level properties of the dopants.
MA Liang**. Effect of Dopant Properties on the Microstructures and Electrical Characteristics of Poly(3-Hexylthiophene) Thin Films[J]. 中国物理快报, 2010, 27(11): 117301-117301.
MA Liang**. Effect of Dopant Properties on the Microstructures and Electrical Characteristics of Poly(3-Hexylthiophene) Thin Films. Chin. Phys. Lett., 2010, 27(11): 117301-117301.
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