摘要We fabricate 1.5 μm InGaAsP/InP tunnel injection multiple−quantum-well (TI-MQW) Fabry-Perot (F-P) ridge lasers. The laser heterostructures, including an inner cladding layer and an InP tunnel barrier layer, are grown by metal-organic chemical-vapor deposition (MOCVD). Characteristic temperature T0 of 160 K at 20°C is obtained for 500−μm−long lasers. T0 is measured as high as 88 K in the temperature range of 15−75°C. Cavity length dependence of T0 is investigated.
Abstract：We fabricate 1.5 μm InGaAsP/InP tunnel injection multiple−quantum-well (TI-MQW) Fabry-Perot (F-P) ridge lasers. The laser heterostructures, including an inner cladding layer and an InP tunnel barrier layer, are grown by metal-organic chemical-vapor deposition (MOCVD). Characteristic temperature T0 of 160 K at 20°C is obtained for 500−μm−long lasers. T0 is measured as high as 88 K in the temperature range of 15−75°C. Cavity length dependence of T0 is investigated.
[1] Yoshida Y, Watanabe H, Shibata K, Takemoto A and Higuchi H 1998 IEEE J. Quantum Electron. 34 1257
[2] Sugimura A 1981 IEEE J. Quantum Electron. 17 627
[3] Bhattacharya P, Singh J, Yoon H, Zhang X K, GutierrezAitken A and Lam Y L 1996 IEEE J. Quantum Electron. 32 1620
[4] Dutta N K and Nelson R J 1982 J. Appl. Phys. 53 74
[5] Haug A 1985 IEEE J. Quantum Electron. 21 716
[6] Sun H C, Davis L, Sethi S, Singh J and Bhattacharya P 1993 IEEE Photon. Technol. Lett. 5 870
[7] Mi Z, Bhattacharya P and Fathpour S 2005 Appl. Phys. Lett. 86 153109
[8] Fathpour S, Mi Z and Bhattacharya P 2005 J. Phys. D 38 2103
[9] Bhattacharya P and Mi Z 2007 Nanophotonics for Communication: Materials, Devices, and Systems IV 6779 77908
[10] Bhattacharya P, Yuan Y, Brock T, Caneau C and Bhat R 1998 IEEE Photon. Technol. Lett. 10 778
2010, Vol. 27 
