摘要Dense and crack-free double-scale lead zirconate titanate (Pb(Zr0.52Ti0.48)O3, PZT) composite piezoelectric thick films have been successfully fabricated on Au/Cr/SiO2/Si substrates by a modified sol-gel method. The XRD analysis indicates that the thick film possesses a single-phase perovskite-type structure. The SEM micrograph shows that the surface is crack-free and the cross section is dense and clear. The thickness of the PZT thick film is about 4μm. It also exhibits good ferroelectric properties, and has high direct current compression resistant properties. At the test frequency of 1kHz, the film has the coercive field of 50kV/cm, the saturation polarization of 54μC/cm2 and the remnant polarization of 30μC/cm2.
Abstract：Dense and crack-free double-scale lead zirconate titanate (Pb(Zr0.52Ti0.48)O3, PZT) composite piezoelectric thick films have been successfully fabricated on Au/Cr/SiO2/Si substrates by a modified sol-gel method. The XRD analysis indicates that the thick film possesses a single-phase perovskite-type structure. The SEM micrograph shows that the surface is crack-free and the cross section is dense and clear. The thickness of the PZT thick film is about 4μm. It also exhibits good ferroelectric properties, and has high direct current compression resistant properties. At the test frequency of 1kHz, the film has the coercive field of 50kV/cm, the saturation polarization of 54μC/cm2 and the remnant polarization of 30μC/cm2.
[1] Scott J F and Araujo C A 1989 Science 246 1400 [2] Dey S and Zuleeg R 1990 Ferroelectrics 108 37 [3] Wen H, Wang X H, Deng X Y and Li L T 2006 Appl. Phys. Lett. 88 222904 [4] Jia Z, Ren T L, Liu T Z, Hu H, Zhang Z G, Xie D and Liu L T 2006 Chin. Phys. Lett. 23 1042 [5] Yan L, Li J F, Cao H and Viehland D 2006 Appl. Phys. Lett. 89 262905 [6] Liu Y M, Li F X and Fang D N 2007 Appl. Phys. Lett. 90032905 [7] Shannigrahi S R and Jang H M 2001 Appl. Phys. Lett. 791051 [8] Chang C and Tang C S 2000 J. Appl. Phys. 87 3931 [9] Kueppers H, Leuerer T, Schnakenberg U, Mokwa W, Hoffmann M,Schneller T, Boettger U and Waser R 2002 Sensors Actuators A 97-98 680 [10] Glynne-Jones P, Beeby S P, Dargie P, Papakostas T and White N M2000 Meas. Sci. Technol. 11 526 [11] Ledermann N, Muralt P, Baborowski J, Gentil S, Mukati K,Cantoni M, Seifert A and Setter N 2003 Sensors Actuators A 105 162 [12] Tsurumi T, Ozawa S and Wada S 2003 J. Sol-Gel Sci. Technol. 26 1037 [13] Wang Z H, Zhu W G, Zhao C L and Tan O K 2003 Mater. Sci.Engin. B 99 56 [14] Zhou Z G, Wang B and Cao M S 2001 Eur. J. Mech. A 20 213 [15] Zhou Z G, Wang B and Cao M S 2003 Mech. Res. Commun. 30 395 [16] Futakuchi T, Matsui Y and Adachi M 1999 Jpn. J. Appl. Phys. 38 5528 [17] Xia D L, Liu M D, Zeng Y K and Li C R 2001 Mater. Sci.Engin. B 87 160 [18] Zhao C L, Wang Z H, Zhu W G, Tan O and Hng H 2004 CeramicsInt. 30 1925 [19] Kikuchi T, Tsurumi T, Ohba Y and Daimon M 1992 Jpn. J. Appl.Phys. 31 3090 [20] Ichiki M, Akedo J, Schroth A, Maeda R and Ishikawa Y 1997 Jpn. J. Appl. Phys. 36 5815 [21] Chen Z, Yang C, Li B and Yang B C 2006 Mater. Lett. 60 1559 [22] Qiu C J, Liu H M, Zhang H J, .Zhao Q L, Meng L N and Cao M S2007 J. Mater. Engin. 8 24 [23] Barrow D A, Petroff T E, Tandon R P and Sayer M 1997 J. Appl.Phys. 81 876 [24] Sayer M, Lukacs M, Olding T, Pang G, Zou L and Chen Y 1999 Mater. Res. Soc. Symp. Proc. 541 599 [25] Zhao C L, Wang Z H, Zhu W G, Yao X and Liu W G 2002 Int. J.Mod. Phys. B 16 242 [26] Zhang D Q, Liu H M, Liu H T, Lin H B, Qiu, C J and Cao M S2006 Chin. High Technol. Lett. 11 1154 [27] Liu H M, Zhang D Q, Lin, H B, Zhang L, Liu H T, Qiu C J andCao M S 2006 J. Mater. Engin. 3 52 [28] Zhang D Q, Wang S J, Sun H S, Wang X L and Cao M S 2007 J. Sol-Gel Sci. Technol. 41 157 [29] Lin H B, Liu H T, Wang F C and Cao M S 2007 J. BeijingUniversity of Aeronautics and Astronautics 33 856 [30] Li B S, Li G R, Zhao S C, Zhu Z G and Ding A L 2005 Chin.Phys. Lett. 22 1236
2008, Vol. 25 
