摘要Fe-doped GaN thin films are grown on c-sapphires by metal organic chemical vapour deposition method (MOCVD). Crystalline quality and phase purity are characterized by x-ray diffraction and Raman scattering measurements. There are no detectable second phases formed during growth and no significant degradation in crystalline quality as Fe ions are doped. Fe-related optical transitions are observed in photoluminescence spectra. Magnetic measurements reveal that the films show room-temperature ferromagnetic behaviour. The ferromagnetism may originate from carrier-mediated Fe-doped GaN diluted magnetic semiconductors or nanoscale iron clusters and Fe--N compounds which we have not detected.
Abstract：Fe-doped GaN thin films are grown on c-sapphires by metal organic chemical vapour deposition method (MOCVD). Crystalline quality and phase purity are characterized by x-ray diffraction and Raman scattering measurements. There are no detectable second phases formed during growth and no significant degradation in crystalline quality as Fe ions are doped. Fe-related optical transitions are observed in photoluminescence spectra. Magnetic measurements reveal that the films show room-temperature ferromagnetic behaviour. The ferromagnetism may originate from carrier-mediated Fe-doped GaN diluted magnetic semiconductors or nanoscale iron clusters and Fe--N compounds which we have not detected.
TAO Zhi-Kuo;ZHANG Rong;CUI Xu-Gao;XIU Xiang-Qian;ZHANG Guo-Yu;XIE Zi-Li;GU Shu-Lin;SHI Yi;ZHENG You-Dou. Optical and Magnetic Properties of Fe-Doped GaN Diluted Magnetic Semiconductors Prepared by MOCVD Method[J]. 中国物理快报, 2008, 25(4): 1476-1478.
TAO Zhi-Kuo, ZHANG Rong, CUI Xu-Gao, XIU Xiang-Qian, ZHANG Guo-Yu, XIE Zi-Li, GU Shu-Lin, SHI Yi, ZHENG You-Dou. Optical and Magnetic Properties of Fe-Doped GaN Diluted Magnetic Semiconductors Prepared by MOCVD Method. Chin. Phys. Lett., 2008, 25(4): 1476-1478.
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