A Stable Porous Silicon Dielectric Reflector with a Photonic Band Gap Centred at 10μm
ZHANG Jie1, XU Shao-Hui1, YANG Shi-Qian1, WANG Lian-Wei1,2, CAO Zhi-Shen3, ZHAN Peng3, WANG Zhen-Lin3
1Laboratory of Polar Materials and Devices and Department of Electronic Engineering, School of Information Science and Technology, East China Normal University, Shanghai 2002412State Key Laboratory of Transducer Technology, Chinese Academy of Sciences, Shanghai 2000503National Laboratory of Solid State Microstructure, Nanjing University, Nanjing 210093
A Stable Porous Silicon Dielectric Reflector with a Photonic Band Gap Centred at 10μm
1Laboratory of Polar Materials and Devices and Department of Electronic Engineering, School of Information Science and Technology, East China Normal University, Shanghai 2002412State Key Laboratory of Transducer Technology, Chinese Academy of Sciences, Shanghai 2000503National Laboratory of Solid State Microstructure, Nanjing University, Nanjing 210093
By pulsed anodic etching at low temperature, we prepared a porous silicon reflector with a photonic band gap centred in the long-wavelength infrared spectral region (centred at about 12μm). After proper oxidation process, the stable reflector structure, which can reflect electromagnetic wave from 8μm to 12μm (centred at 10μm) within wide incidence angles (about 50°), is obtained. The wavelength shift of absorption peak of Si--H and Si--O shows the influence of oxidation process and indicates the stability of oxidized porous silicon dielectric reflector, which offers possible applications for the room temperature infrared sensor.
Abstract：By pulsed anodic etching at low temperature, we prepared a porous silicon reflector with a photonic band gap centred in the long-wavelength infrared spectral region (centred at about 12μm). After proper oxidation process, the stable reflector structure, which can reflect electromagnetic wave from 8μm to 12μm (centred at 10μm) within wide incidence angles (about 50°), is obtained. The wavelength shift of absorption peak of Si--H and Si--O shows the influence of oxidation process and indicates the stability of oxidized porous silicon dielectric reflector, which offers possible applications for the room temperature infrared sensor.
ZHANG Jie;XU Shao-Hui;YANG Shi-Qian;WANG Lian-Wei;CAO Zhi-Shen;ZHAN Peng;WANG Zhen-Lin. A Stable Porous Silicon Dielectric Reflector with a Photonic Band Gap Centred at 10μm[J]. 中国物理快报, 2008, 25(4): 1317-1320.
ZHANG Jie, XU Shao-Hui, YANG Shi-Qian, WANG Lian-Wei, CAO Zhi-Shen, ZHAN Peng, WANG Zhen-Lin. A Stable Porous Silicon Dielectric Reflector with a Photonic Band Gap Centred at 10μm. Chin. Phys. Lett., 2008, 25(4): 1317-1320.
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2008, Vol. 25 
