Detailed Characteristics of Expansion Velocity of Si from Laser Ablated SiC
CHEN Ming1, LIU Xiang-Dong1, SUN Yu-Ming2, YANG Xin-Mei1, ZHAO Ming-Wen1, QI Huan-Jun2, CHEN Xiu-Fang3, XU Xian-Gang3
1School of Physics, Shandong University, Jinan 2501002School of Information Science and Engineering, Shandong University, Jinan 2501003State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100
Detailed Characteristics of Expansion Velocity of Si from Laser Ablated SiC
1School of Physics, Shandong University, Jinan 2501002School of Information Science and Engineering, Shandong University, Jinan 2501003State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100
摘要Optical emission of plasma is used to investigate the characteristics of dynamics distribution in the plume generated by ablation of a SiC sample using Nd:YAG laser. The plume expansion dynamics is characterized by time-of-flight measurement. We find that the profiles of Si (I) (390.55nm) split into two components and the Si (II) (634.71nm) spectra show two distinct expansion dynamics regions. The time-of-flight measurement of Si(II) (634.71nm) under different laser irradiance conditions, from 0.236GW/cm2 to 1.667GW/cm2, are presented and discussed.
Abstract：Optical emission of plasma is used to investigate the characteristics of dynamics distribution in the plume generated by ablation of a SiC sample using Nd:YAG laser. The plume expansion dynamics is characterized by time-of-flight measurement. We find that the profiles of Si (I) (390.55nm) split into two components and the Si (II) (634.71nm) spectra show two distinct expansion dynamics regions. The time-of-flight measurement of Si(II) (634.71nm) under different laser irradiance conditions, from 0.236GW/cm2 to 1.667GW/cm2, are presented and discussed.
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2008, Vol. 25 
