Spin Splitting in In0.53Ga0.47As/InP Heterostructures
SHANG Li-Yan1, YU Guo-Lin1, LIN Tie1, ZHOU Wen-Zheng1,2, GUO Shao-Ling1, DAI Ning1, CHU Jun-Hao1
1National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 2000832Physicals Science and Technology College, Guangxi University, Nanning 530004
Spin Splitting in In0.53Ga0.47As/InP Heterostructures
1National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 2000832Physicals Science and Technology College, Guangxi University, Nanning 530004
摘要Spin-orbit coupling in a gate-controlled In0.53Ga0.47As/InP quantum well is investigated in the presence of a large Zeeman effect. We develop a Fourier-transform fitting procedure to extract the zero-field spin-splitting Rashba parameter α. The bare g factor value is found to be of the order of 3 from magnetotransport measurements in tilted magnetic fields. It is found that both Zeeman splitting and Rashba splitting play important roles in determining the total spin splitting in In0.53Ga0.47As.
Abstract：Spin-orbit coupling in a gate-controlled In0.53Ga0.47As/InP quantum well is investigated in the presence of a large Zeeman effect. We develop a Fourier-transform fitting procedure to extract the zero-field spin-splitting Rashba parameter α. The bare g factor value is found to be of the order of 3 from magnetotransport measurements in tilted magnetic fields. It is found that both Zeeman splitting and Rashba splitting play important roles in determining the total spin splitting in In0.53Ga0.47As.
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2008, Vol. 25 
