Red and Near-Infrared Electroluminescences from Metal-Free Phthalocyanine
FAN Zhao-Qi1, CHENG Chuan-Hui1,2, YE Kai-Qi3, YU Shu-Kun2, HE Wei1, XIA Dao-Cheng1, GUO Zhen-Qiang2, SHENG Ren-Sheng1, WANG Xu3, DU Xi Guang4, DU Guo-Tong 1,2
1State Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Dalian University of Technology, Dalian 1160232State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 1300123Key Lab of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun 1300124Faculty of Chemistry, Northeast Normal University, Changchun 130024
Red and Near-Infrared Electroluminescences from Metal-Free Phthalocyanine
FAN Zhao-Qi1;CHENG Chuan-Hui1,2;YE Kai-Qi3;YU Shu-Kun2;HE Wei1; XIA Dao-Cheng1;GUO Zhen-Qiang2;SHENG Ren-Sheng1;WANG Xu3; DU Xi Guang4;DU Guo-Tong 1,2
1State Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Dalian University of Technology, Dalian 1160232State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 1300123Key Lab of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun 1300124Faculty of Chemistry, Northeast Normal University, Changchun 130024
Organic light emitting diodes are fabricated based on metal-free phthalocyanine (H2Pc) doped into tris-(8-hydroxyquinoline) aluminium (Alq3). The device structure is ITO/NPB (30nm)/Alq3: H2Pc(30nm)/BCP(20nm) /Alq3(20 nm)/Al. In the light-emitting layers, H2Pc concentrations are varied from 0wt% to 100wt%. The emissions around 708nm and 800nm appear at low concentrations, while the emissions around 910nm and 930nm appear at high concentrations. The emissions around 708nm and 800nm are from H2Pc monomers. The emissions around 910nm and 930nm are from H2Pc aggregates. The dominant mechanism in the doped devices is direct charge trapping.
Abstract：Organic light emitting diodes are fabricated based on metal-free phthalocyanine (H2Pc) doped into tris-(8-hydroxyquinoline) aluminium (Alq3). The device structure is ITO/NPB (30nm)/Alq3: H2Pc(30nm)/BCP(20nm) /Alq3(20 nm)/Al. In the light-emitting layers, H2Pc concentrations are varied from 0wt% to 100wt%. The emissions around 708nm and 800nm appear at low concentrations, while the emissions around 910nm and 930nm appear at high concentrations. The emissions around 708nm and 800nm are from H2Pc monomers. The emissions around 910nm and 930nm are from H2Pc aggregates. The dominant mechanism in the doped devices is direct charge trapping.
FAN Zhao-Qi;CHENG Chuan-Hui;YE Kai-Qi;YU Shu-Kun;HE Wei; XIA Dao-Cheng;GUO Zhen-Qiang;SHENG Ren-Sheng;WANG Xu; DU Xi Guang;DU Guo-Tong;. Red and Near-Infrared Electroluminescences from Metal-Free Phthalocyanine[J]. 中国物理快报, 2008, 25(6): 2261-2264.
FAN Zhao-Qi, CHENG Chuan-Hui, YE Kai-Qi, YU Shu-Kun, HE Wei, XIA Dao-Cheng, GUO Zhen-Qiang, SHENG Ren-Sheng, WANG Xu, DU Xi Guang, DU Guo-Tong,. Red and Near-Infrared Electroluminescences from Metal-Free Phthalocyanine. Chin. Phys. Lett., 2008, 25(6): 2261-2264.
[1] Tang C W and Van Slyke 1987 Appl. Phys. Lett. 51 913 [2] Curry R J and Gillin W P 1999 Appl. Phys. Lett. 75 1380 [3] Riordan A O, Connor E O and Moynihan S 2006 ThinSolid Films 497 299 [4] Harrison B S, Foley T J, Bouguettaya M et al 2001 Appl. Phys. Lett 79 3770 [5] Hong Z R, Liang C J, Li R G et al 2001 Appl. Phys.Lett. 79 1942 [6] Zang F X, Hong Z R, Li W L et al 2004 Appl. Phys.Lett. 84 2679 [7] Gadisa A, Perzon E, Andersson M R et al 2007 Appl.Phys. Lett. 90 113510 [8] Xuan Y, Qian G, Wang Z Y et al 2007 Thin Solid Films(in press) [9] Tessler N, Medvedev V and Kazes M 2002 Science 295 1506 [10] Hohnholz D, Steinbrecher S et al 2000 J. Mol.Struct. 521 231 [11] Cheng C H, Fan Z Q, Yu S K et al 2006 Appl. Phys.Lett. 88 213505 [12] Fujii A, Yoshida M, Ohmori Y et al 1996 Jpn. J.Appl. Phys. 35 L37 [13] Assour J M and Harrison S E 1965 J. Am. Chem. Soc. 87 651 [14] Sakakibara Y, Bera R N, Mizutani T et al 2001 J.Phys. Chem. B 105 1547 [15] Conwell E M 1997 Synth. Met. 85 995 [16] Tang C W, VanSlyke S A, Chen C H 1989 J.Appl. Phys. 65 3610 [17] Gong X, Lim S H, Ostrowski J C et al 2004 J. Appl.Phys. 95 948 [18] Loutfy R O and Sharp J H 1977 J. Appl. Electrochem. 7 315
2008, Vol. 25 
