摘要By orthogonal design theory, technological parameters of the (002)-oriented ZnO film prepared in sol-gel process are optimized. A set of technological parameters for growing highly (002)-oriented ZnO film is obtained. As a result, it is proven that the Zn2+ concentration is the most important factor to grow a highly (002)-oriented ZnO film. We take an appropriate Zn2+ concentration 0.35mol/L for the aimed film, of which photoluminescence property is better than those of the films derived from other Zn2+ concentrations precursor solution. The Zn2+ concentration either larger or smaller than 0.35mol/L leads to the (002)-oriented degree decrease of films. By employing an atom force microscope, a hexagonal atom arrangement, which indicates that the film site detected is a ZnO single crystal, is observed in the surface of the highly (002)-oriented film.
Abstract：By orthogonal design theory, technological parameters of the (002)-oriented ZnO film prepared in sol-gel process are optimized. A set of technological parameters for growing highly (002)-oriented ZnO film is obtained. As a result, it is proven that the Zn2+ concentration is the most important factor to grow a highly (002)-oriented ZnO film. We take an appropriate Zn2+ concentration 0.35mol/L for the aimed film, of which photoluminescence property is better than those of the films derived from other Zn2+ concentrations precursor solution. The Zn2+ concentration either larger or smaller than 0.35mol/L leads to the (002)-oriented degree decrease of films. By employing an atom force microscope, a hexagonal atom arrangement, which indicates that the film site detected is a ZnO single crystal, is observed in the surface of the highly (002)-oriented film.
YAN Jun-Feng;ZHAO Li-Li;ZHANG Zhi-Yong. Optimization of (002)-Oriented ZnO Film Synthesis in Sol-Gel Process and Film Photoluminescence Property[J]. 中国物理快报, 2008, 25(6): 2253-2256.
YAN Jun-Feng, ZHAO Li-Li, ZHANG Zhi-Yong. Optimization of (002)-Oriented ZnO Film Synthesis in Sol-Gel Process and Film Photoluminescence Property. Chin. Phys. Lett., 2008, 25(6): 2253-2256.
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2008, Vol. 25 
