Properties of Seamless W Sub-Micro Electrode Used for Phase Change Memory
FENG Gao-Ming1,2, SONG Zhi-Tang1, LIU Bo1, FENG Song-Lin1, WAN Xu-Dong3
1Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 2000502Graduate School of the Chinese Academy of Sciences, Beijing 1000493Semiconductor Manufacture International Corporation (Shanghai), 18 Zhangjiang Road, Shanghai 200050
Properties of Seamless W Sub-Micro Electrode Used for Phase Change Memory
1Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 2000502Graduate School of the Chinese Academy of Sciences, Beijing 1000493Semiconductor Manufacture International Corporation (Shanghai), 18 Zhangjiang Road, Shanghai 200050
摘要In order to improve the reliability of C-RAM devices, a seamless sub-micro W heating electrode in diameter 260nm is fabricated with standard 0.18μm CMOS processing line. Then we successfully manufacture a chalcogenide random access memory device using this seamless sub-micro W heating electrode. The results show good electrical performance, e.g. the reset current of 1.3mA and the set/reset cycle up to 109 have been achieved.
Abstract：In order to improve the reliability of C-RAM devices, a seamless sub-micro W heating electrode in diameter 260nm is fabricated with standard 0.18μm CMOS processing line. Then we successfully manufacture a chalcogenide random access memory device using this seamless sub-micro W heating electrode. The results show good electrical performance, e.g. the reset current of 1.3mA and the set/reset cycle up to 109 have been achieved.
FENG Gao-Ming;SONG Zhi-Tang;LIU Bo;FENG Song-Lin;WAN Xu-Dong. Properties of Seamless W Sub-Micro Electrode Used for Phase Change Memory[J]. 中国物理快报, 2008, 25(6): 2289-2291.
FENG Gao-Ming, SONG Zhi-Tang, LIU Bo, FENG Song-Lin, WAN Xu-Dong. Properties of Seamless W Sub-Micro Electrode Used for Phase Change Memory. Chin. Phys. Lett., 2008, 25(6): 2289-2291.
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2008, Vol. 25 
