摘要Spin polarized injection into organic and inorganic semiconductors are studied theoretically from the spin diffusion theory and Ohm's law, and the emphases are placed on the effect of the carrier differences on the current spin polarization. The mobility and the spin-flip time of carriers in organic and inorganic semiconductors are different. From the calculation, it is found that current spin polarization at a ferromagnetic/organic interface is higher than that at a ferromagnetic/inorganic interface because of different carriers in them. Effects of the conductivity matching, the spin dependent interfacial resistances, and the bulk spin polarization of the ferromagnetic layer on the spin polarized injection are also discussed.
Abstract：Spin polarized injection into organic and inorganic semiconductors are studied theoretically from the spin diffusion theory and Ohm's law, and the emphases are placed on the effect of the carrier differences on the current spin polarization. The mobility and the spin-flip time of carriers in organic and inorganic semiconductors are different. From the calculation, it is found that current spin polarization at a ferromagnetic/organic interface is higher than that at a ferromagnetic/inorganic interface because of different carriers in them. Effects of the conductivity matching, the spin dependent interfacial resistances, and the bulk spin polarization of the ferromagnetic layer on the spin polarized injection are also discussed.
2008, Vol. 25 
