Abstract： The oxidation state of Cu in the homologous Tl2Ba2Can-1CunO2n+4+δ(n = 1 - 4) series has been analyzed in terms of the bond valence sums. It is found that the totally mobile hole concentration nH,t of the type-I CuO2 planes at the optimal level increases with increasing number of CuO2 layers per unit cell from 1 to 3, and the largest nH,t is observed to be 0.474 when n = 3, which just corresponds to the highest Tc in the bilayer T1-based materials, and then it decreases with the increase of n. It is indicated that the correlation between the maximum value of Tc and n is similar to that between nH,t and n.
(Charge carriers: generation, recombination, lifetime, and trapping)
引用本文:
CHEN Xiao-jia;XU Zhu-an;JIAO Zheng-kuan;ZHANG Qi-rui. Oxidation State of Cu and Superconductivity in Bilayer T1-Based Cuprates[J]. 中国物理快报, 1997, 14(3): 221-224.
CHEN Xiao-jia, XU Zhu-an, JIAO Zheng-kuan, ZHANG Qi-rui. Oxidation State of Cu and Superconductivity in Bilayer T1-Based Cuprates. Chin. Phys. Lett., 1997, 14(3): 221-224.
1997, Vol. 14 
