Interfacial Structure Between Epitaxial Diamond Films and Silicon Substrates
GAO Qiao-jun1 , YOU Li-ping2 , PAN Xiao-hui1 , ZHANG Fan1 , PENG Xiao-fu3 , LIN Zeng-dong3
1 Department of Physics, 2 Laboratory of Electron Microscopy, Peking University, Beijing 100871
3 Beijing Institute of Powder Metallurgy, Beijing 100078
Interfacial Structure Between Epitaxial Diamond Films and Silicon Substrates
GAO Qiao-jun1 ;YOU Li-ping2 ;PAN Xiao-hui1 ;ZHANG Fan1 ;PENG Xiao-fu3 ;LIN Zeng-dong3
1 Department of Physics, 2 Laboratory of Electron Microscopy, Peking University, Beijing 100871
3 Beijing Institute of Powder Metallurgy, Beijing 100078
关键词 ：
81.15.Gh ,
68.55.Eg ,
68.35.-p
Abstract ： Epitaxial diamond films on non-mirror polished silicon substrate was achieved using hot filament chemical vapor deposition method with one flat horizontal filament. The orientation relationship of epitaxial diamond films on silicon substrate has been investigated by cross-sectional high-resolution transmission electron microscopy We found one excellent epitaxial configuration and according to the experimental result we suggest a corresponding model. The lattice misfit is only 0.1-2.8% related to our model and the analysis of 60°type interface dislocation also supports this model.
Key words ：
81.15.Gh
68.55.Eg
68.35.-p
出版日期: 1997-02-01
:
81.15.Gh
(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
68.55.Eg
68.35.-p
(Solid surfaces and solid-solid interfaces: structure and energetics)
引用本文:
GAO Qiao-jun;YOU Li-ping;PAN Xiao-hui;ZHANG Fan;PENG Xiao-fu;LIN Zeng-dong. Interfacial Structure Between Epitaxial Diamond Films and Silicon Substrates[J]. 中国物理快报, 1997, 14(2): 145-147.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1997/V14/I2/145
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