Double-Injection Bifurcation Optical Active Switch Integrated on Silicon-on-Insulator for 1.3 μm Operation
ZHAO Ce-zhou1 , CHEN Ai-hua2 , LIU En-ke3 , LI Guo-zheng3
1 Microelectronics Institute,
2 Electronic Mechanics Institute, Xidian University, Xian 710071
3 Department of Electronic Engineering, Xian Jiaotong University, Xian 710049
Double-Injection Bifurcation Optical Active Switch Integrated on Silicon-on-Insulator for 1.3 μm Operation
ZHAO Ce-zhou1 ;CHEN Ai-hua2 ;LIU En-ke3 ;LI Guo-zheng3
1 Microelectronics Institute,
2 Electronic Mechanics Institute, Xidian University, Xian 710071
3 Department of Electronic Engineering, Xian Jiaotong University, Xian 710049
关键词 ：
42.79.Ta ,
42.82.-m
Abstract ： Based on the double-injection effect, the dual-mode interference principle and the free-carrier plasma dispersion effect, a double-injection bifurcation optical active switch integrated on silicon-on-insulator has been proposed and fabricated. Its insertion loss and crosstalk are measured to be less than 5.32 and -14.4dB, respectively, at wavelength 1.3μm and the total switching current 90mA. Response time is about 180ns.
Key words ：
42.79.Ta
42.82.-m
出版日期: 1997-03-01
:
42.79.Ta
(Optical computers, logic elements, interconnects, switches; neural networks)
42.82.-m
(Integrated optics)
引用本文:
ZHAO Ce-zhou;CHEN Ai-hua;LIU En-ke;LI Guo-zheng. Double-Injection Bifurcation Optical Active Switch Integrated on Silicon-on-Insulator for 1.3 μm Operation[J]. 中国物理快报, 1997, 14(3): 183-186.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1997/V14/I3/183
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