Antiphase State in Passively Q-Switched Yb:YAG Microchip Lasers with a Nd,Cr:YAG as Saturable Absorber
GU Xue-Wen1 , ZHANG Qiu-Lin2 , ZHANG Dong-Xiang2 , FENG Bao-Hua2 , ZHANG Xiao-Hua1 , ZHANG Guang-Yin1
1 The MOE Key Laboratory of Advanced Technique and Fabrication for Weak-Light Nonlinear Photonics Materials, and Tianjin Key Laboratory of Photonics Materials and Technology for Information Science, Teda APS, Nankai University, Tianjin 300457
2 Laboratory of Optical Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080
Antiphase State in Passively Q-Switched Yb:YAG Microchip Lasers with a Nd,Cr:YAG as Saturable Absorber
GU Xue-Wen1 ;ZHANG Qiu-Lin2 ;ZHANG Dong-Xiang2 ;FENG Bao-Hua2 ;ZHANG Xiao-Hua1 ;ZHANG Guang-Yin1
1 The MOE Key Laboratory of Advanced Technique and Fabrication for Weak-Light Nonlinear Photonics Materials, and Tianjin Key Laboratory of Photonics Materials and Technology for Information Science, Teda APS, Nankai University, Tianjin 300457
2 Laboratory of Optical Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080
关键词 ：
42.55.Xi ,
42.60.Gd ,
42.65.Sf
Abstract ： We experimentally investigate the antiphase dynamics phenomenon that occurs in a diode-pumped passively Q-switched Yb:YAG multimode laser with a Nd,Cr:YAG saturable absorber. Due to the effect of spatial hole burning, the multimode lasers with one, two, or three modes at different pump power are observed, and the pulses sequences display classic antiphase dynamics.
Key words ：
42.55.Xi
42.60.Gd
42.65.Sf
出版日期: 2005-06-01
:
42.55.Xi
(Diode-pumped lasers)
42.60.Gd
(Q-switching)
42.65.Sf
(Dynamics of nonlinear optical systems; optical instabilities, optical chaos and complexity, and optical spatio-temporal dynamics)
引用本文:
GU Xue-Wen;ZHANG Qiu-Lin;ZHANG Dong-Xiang;FENG Bao-Hua;ZHANG Xiao-Hua;ZHANG Guang-Yin. Antiphase State in Passively Q-Switched Yb:YAG Microchip Lasers with a Nd,Cr:YAG as Saturable Absorber[J]. 中国物理快报, 2005, 22(6): 1416-1419.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2005/V22/I6/1416
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2005, Vol. 22 
