Binding Energies of Negatively Charged Donors in a Gaussian Potential Quantum Dot
XIE Wen-Fang
Department of Physics, Guangzhou University, Guangzhou 510405
Binding Energies of Negatively Charged Donors in a Gaussian Potential Quantum Dot
XIE Wen-Fang
Department of Physics, Guangzhou University, Guangzhou 510405
关键词 :
73.21.-b ,
78.67.-n
Abstract : We investigate a negatively charged donor centre (D- ) trapped by a quantum dot, which is subjected to a Gaussian potential confinement. Calculations are carried out by using the method of numerical diagonalization of Hamiltonian within the effective-mass approximation. The dependence of the ground state of the negatively charged donor on the dot size and the potential depth is studied. The same calculations performed with the parabolic approximation of the Gaussian potential lead to the results that are qualitatively and quantitatively different.
Key words :
73.21.-b
78.67.-n
出版日期: 2005-07-01
:
73.21.-b
(Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems)
78.67.-n
(Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures)
引用本文:
XIE Wen-Fang. Binding Energies of Negatively Charged Donors in a Gaussian Potential Quantum Dot[J]. 中国物理快报, 2005, 22(7): 1768-1771.
XIE Wen-Fang. Binding Energies of Negatively Charged Donors in a Gaussian Potential Quantum Dot. Chin. Phys. Lett., 2005, 22(7): 1768-1771.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2005/V22/I7/1768
[1]
XU Ji-Ying;WANG Jia;GAI Hong-Feng;TIAN Qian;WANG Bo-Xiong;HAO Zhi-Biao;HAN Shuo. Experimental Investigation of an L-Shaped Very-Small-Aperture Laser [J]. 中国物理快报, 2006, 23(9): 2587-2590.
[2]
ZHONG Yu;SHEN Lin-Fang;RAN Li-Xin;CHEN Xu-Dong;Liisi JylhäTomasz M. Grzegorczyk;Jin Au Kong;. Reflection and Refraction on the Boundary of a Left-Handed Material with a Hyperbolic Dispersion Relation [J]. 中国物理快报, 2006, 23(5): 1296-1298.
[3]
WANG Xiao-Xin;ZHANG Jian-Guo;CHENG Bu-Wen;YU Jin-Zhong;WANG Qi-Ming. Electroluminescence Afterglow from Indium Tin Oxide/Si-Rich SiO2 /p-Si Structure [J]. 中国物理快报, 2006, 23(5): 1306-1309.
[4]
HAO Zhong-Hua;GONG Hong-Mei;HAN Jun-Bo;ZHAI Yue-Ying;WANG Qu-Quan;. One- and Two-Photon Excited Fluorescence of CdSe and CdSe/ZnS Quantum Dots in n-Hexane [J]. 中国物理快报, 2006, 23(10): 2859-2862.
[5]
ZHOU Xia; ZHENG Hou-Zhi. A New Type of Photoelectric Response in a Double Barrier Structure with a Wide Quantum Well [J]. 中国物理快报, 2005, 22(5): 1222-1224.
[6]
YU Ping;QIU Dong-Jiang;WU Hui-Zhen. Ultraviolet and Deep-Ultraviolet Emissions from c-Mgx Zn1-x O/MgO Ultrathin Multilayer Heterostructures [J]. 中国物理快报, 2005, 22(10): 2688-2691.
[7]
XU Tie-Jun;XU Ji-Ying;WANG Jia;TIAN Qian. Optical Field Measurement of Nano-Apertures with a Scanning Near-Field Optical Microscope [J]. 中国物理快报, 2004, 21(8): 1644-1647.
[8]
XU Tian-Ning;WU Hui-Zhen;LAO Yan-Feng;QIU Dong-Jiang;CHEN Nai-Bo;DAI Ning. Anodic-Aluminium-Oxide Template-Assisted Growth of ZnO Nanodots on Si (100) at Low Temperature [J]. 中国物理快报, 2004, 21(7): 1327-1329.
[9]
DONG Qing-Rui;XU Ying-Qiang;ZHANG Shi-Yong;NIU Zhi-Chuan. Role of Interactions in Electronic Structure of a Two-Electron Quantum Dot Molecule [J]. 中国物理快报, 2004, 21(12): 2496-2499.
[10]
YU Li-Yuan;CAO Jun-Cheng. esonant Optical Absorption in Semiconductor Quantum Wells [J]. 中国物理快报, 2004, 21(12): 2504-2506.
[11]
HAN Jia-Guang;ZHU Zhi-Yuan;HE Feng; LIAO Yi;WANG Zhen-Xia;ZHANG Wei; YU Li-Ping;SUN Li-Tao;WANG Ting-Tai. Terahertz Conductivity of Single Walled Nanotube Films
[J]. 中国物理快报, 2003, 20(9): 1501-1503.
[12]
PAN Xin-Yu;JIANG Hong-Bing;LIU Chun-Ling;GONG Qi-Huang;ZHANG Xi-Yao;ZHANG Qi-Feng;XU Bei-Xue;WU Jin-Lei. Fluorescence Microscopy of Nanoscale Silver Oxide Thin Films [J]. 中国物理快报, 2003, 20(1): 133-136.
[13]
LUO Ying;DUAN Su-Qing;FAN Wen-Bin;ZAO Xian-Geng;WANG Li-Min;MA Ben-Kun. Dynamic Localization of a One-Dimensional Quantum Dot Array in an ac Electric Field [J]. 中国物理快报, 2002, 19(7): 981-984.