Storage of Photoexcited Electron-Hole Pairs in an AlAs/GaAs
Heterosturcture Created by Electron Transfer in Real and k Spaces
PENG Jin, HU Bing, HU Cheng-Yong, BIAN Song-Bao, YANG Fu-Hua, ZHENG Hou-Zhi
National Laboratory for Superlattices and Microstructures,
Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083
Storage of Photoexcited Electron-Hole Pairs in an AlAs/GaAs
Heterosturcture Created by Electron Transfer in Real and k Spaces
PENG Jin;HU Bing;HU Cheng-Yong;BIAN Song-Bao;YANG Fu-Hua;ZHENG Hou-Zhi
National Laboratory for Superlattices and Microstructures,
Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083
关键词 ：
79.60.Jv ,
42.79.Vb
Abstract ： The storage of photoexcited electron-hole pairs is experimentally carried out and theoretically realized by transfering electrons in both real and k spaces through resonant Γ - X in an AlAs/GaAs heterostructure. This is proven by the peculiar capacitance jump and hysteresis in the measured capacitance-voltage curves. Our structure may be used as a photonic memory cell with a long storage time and a fast retrieval of photons as well.
Key words ：
79.60.Jv
42.79.Vb
出版日期: 2002-10-01
:
79.60.Jv
(Interfaces; heterostructures; nanostructures)
42.79.Vb
(Optical storage systems, optical disks)
引用本文:
PENG Jin;HU Bing;HU Cheng-Yong;BIAN Song-Bao;YANG Fu-Hua;ZHENG Hou-Zhi. Storage of Photoexcited Electron-Hole Pairs in an AlAs/GaAs
Heterosturcture Created by Electron Transfer in Real and k Spaces[J]. 中国物理快报, 2002, 19(10): 1540-1542.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2002/V19/I10/1540
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