Self-Mode-Locking in a Diode-Pumped Self-Q-Switched
Nd3+, Cr4+: YAG Laser
YANG Lin1,2, FENG Bao-Hua1, ZHANG Zhi-Guo1, Volker Gaebler3, LIU Bai-Ning3, Hans J. Eichler3, ZHANG Shi-Wen4
1Laboratory of Optical Physics, Institute of Physics and Center for Condensed Matter Physics, Chinese Academy of Sciences, PO Box 603, Beijing 100080
2State Key Laboratory of Laser Technology, Huazhong University of Science and Technology, Wuhan 430074
3Optical Institute, Technical University Berlin, Str. d. 17. Juni 135, D-10623 Berlin, Germany
4North China Research Institute of Electro-Optics, Beijing 100080
Self-Mode-Locking in a Diode-Pumped Self-Q-Switched
Nd3+, Cr4+: YAG Laser
YANG Lin1,2;FENG Bao-Hua1;ZHANG Zhi-Guo1;Volker Gaebler3;LIU Bai-Ning3;Hans J. Eichler3;ZHANG Shi-Wen4
1Laboratory of Optical Physics, Institute of Physics and Center for Condensed Matter Physics, Chinese Academy of Sciences, PO Box 603, Beijing 100080
2State Key Laboratory of Laser Technology, Huazhong University of Science and Technology, Wuhan 430074
3Optical Institute, Technical University Berlin, Str. d. 17. Juni 135, D-10623 Berlin, Germany
4North China Research Institute of Electro-Optics, Beijing 100080
Abstract： We report for the first time on the observation of self-mode-locking in a diode pumped self-Q-switched (SQS) Nd3+, Cr4+:YAG laser. This phenomenon results from significant excited state absorption of the Cr4+ ions in the co-doped host during the SQS laser pulses. The self-mode-locking occurs already slightly above the SQS laser threshold. Experiments using relatively low saturable intensity achieved a modulation depth of more than 40%.
2002, Vol. 19 
