Synthesis of Thick Diamond Film by Direct Current Hot-Cathode Plasma Chemical Vapor Deposition
JIN Zeng-Sun, JIANG Zhi-Gang, BAI Yi-Zhen, LÜ Xian-Yi
National Laboratory of Superhard Materials, Jilin University,
Changchun 130023
Synthesis of Thick Diamond Film by Direct Current Hot-Cathode Plasma Chemical Vapor Deposition
JIN Zeng-Sun;JIANG Zhi-Gang;BAI Yi-Zhen;LÜ Xian-Yi
National Laboratory of Superhard Materials, Jilin University,
Changchun 130023
关键词 ：
81.15.Gh ,
66.60.+a ,
81.05.Uw
Abstract ： The method of direct current hot-cathode plasma chemical vapour deposition method is established. A long-time stable glow discharge at large discharge current and high gas pressure has been achieved by using a hot cathode in the temperature range from 1100°C to 1500°C and nonsymmetrical configuration of the poles, in which the diameter of cathode is larger than that of anode. High quality thick diamond films in diameter of 40-50 mm and thickness of 0.5-4.2 mm, have been synthesized by this method. Transparent thick diamond films were grown over a range of growth rates of 5-10μm/h. Most of the thick diamond films have thermal conductivities of 10-12W/K.cm. The thick diamond films with high thermal conductivity can be used as a heat sink of semiconducting laser diode array and used as a heat spreading and isolation substrate of multichip modules. The performance can be obviously improved.
Key words ：
81.15.Gh
66.60.+a
81.05.Uw
出版日期: 2002-09-01
引用本文:
JIN Zeng-Sun;JIANG Zhi-Gang;BAI Yi-Zhen;LÜXian-Yi. Synthesis of Thick Diamond Film by Direct Current Hot-Cathode Plasma Chemical Vapor Deposition[J]. 中国物理快报, 2002, 19(9): 1374-1376.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2002/V19/I9/1374
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