A Novel Conventional/Long-Band Erbium-Doped Fibre Amplified Spontaneous Emission Source with 80 nm Bandwidth
HUANG Wen-Cai1, TAM Hwa-Yaw2, WAI P.K.A3, DONG Xin-Yong2, MING Hai1, XIE Jin-Ping1
1Department of Physics, University of Science and
Technology of China, Hefei 230026
2Department of Electrical Engineering, The Hong Kong Polytechnic University, Kowloon, Hong Kong
3Department of Electronic and Information Engineering, The Hong Kong Polytechnic University, Kowloon, Hong Kong
A Novel Conventional/Long-Band Erbium-Doped Fibre Amplified Spontaneous Emission Source with 80 nm Bandwidth
1Department of Physics, University of Science and
Technology of China, Hefei 230026
2Department of Electrical Engineering, The Hong Kong Polytechnic University, Kowloon, Hong Kong
3Department of Electronic and Information Engineering, The Hong Kong Polytechnic University, Kowloon, Hong Kong
Abstract: We report on a one-stage erbium-doped fibre amplified spontaneous emission (ASE) source with 80 nm bandwidth and 13.5 dBm output power. The broad bandwidth erbium ASE source was realized in an erbium-doped fibre with 37 m length by a 1480 nm laser diode and a 980 nm laser diode as forward and backward pump sources, respectively. The total pump power is only 95.7 mW.