Abstract： Zn1-xMgxO films have been grown on silicon at various substrate temperatures by pulsed laser deposition. The structural and photoluminescent properties of films as a function of substrate temperature were studied. The optimized substrate temperature is 650°C. The x-ray diffraction spectra indicate that the films are highly C-axis oriented, and no phase separation is observed. The crystal grain size of film is about 100 nm as examined by atomic force microscopy. The cross-sectional transmission electron microscopy verified C-axis orientation of the Zn1-xMgxO. These films showed ultraviolet photoluminescence at room temperature. The near-band-edge emission peak of the Zn1-xMgxO film deposited at 600°C has a blue shift (0.40 eV) larger than that of the film deposited at 500°C (0.33 eV). The ratio of the near-band-edge to defect level peak intensity is as large as 159.
ZOU Lu;YE Zhi-Zhen;HUANG Jing-Yun;ZHAO Bing-Hui. Structural Characterization and Photoluminescent Properties of
Zn1-xMgxO Films on Silicon[J]. 中国物理快报, 2002, 19(9): 1350-1352.
ZOU Lu, YE Zhi-Zhen, HUANG Jing-Yun, ZHAO Bing-Hui. Structural Characterization and Photoluminescent Properties of
Zn1-xMgxO Films on Silicon. Chin. Phys. Lett., 2002, 19(9): 1350-1352.
2002, Vol. 19 
