Monte Carlo Simulation of Growth of Thin Film Prepared by Pulsed Laser
ZHANG Duan-Ming1,2, GUAN Li1,2, YU Bo-Ming1, LI Zhi-Hua1,2
1Department of Physics, Huazhong University of Science and Technology, Wuhan 430074
2State Key Laboratory of Laser Technology, Huazhong University of Science and Technology, Wuhan 430074
Monte Carlo Simulation of Growth of Thin Film Prepared by Pulsed Laser
1Department of Physics, Huazhong University of Science and Technology, Wuhan 430074
2State Key Laboratory of Laser Technology, Huazhong University of Science and Technology, Wuhan 430074
Abstract： We use the Monte-Carlo simulation method to perform the early growth stage of thin film prepared by pulsed laser deposition. We focus on the number of point defects on the substrate surface varying with the energy density of laser and substrate temperature. The results show that the laser energy and the substrate temperature strongly affect the morphology and size of the growth islands and the deposition rate of thin film. Our results are in good agreement with the related experimental results.
ZHANG Duan-Ming;GUAN Li;YU Bo-Ming;LI Zhi-Hua;. Monte Carlo Simulation of Growth of Thin Film Prepared by Pulsed Laser[J]. 中国物理快报, 2003, 20(2): 263-266.
ZHANG Duan-Ming, GUAN Li, YU Bo-Ming, LI Zhi-Hua,. Monte Carlo Simulation of Growth of Thin Film Prepared by Pulsed Laser. Chin. Phys. Lett., 2003, 20(2): 263-266.
2003, Vol. 20 
