摘要We reports a phase-space structure of MeV proton beam planar channelled along {110} planes in Si crystal using simulation results with the help of a computer code FLUX. The aim is to understand channelling conditions suitable for disorder measurement in crystals. Phase-space distribution of a planar channelled proton beam evolutes in a systematic fashion when it travels into the crystal. Planar channelled beam oscillates between phase-like and space-like conditions in which a part of the beam becomes under phase and space criticalities. These criticality conditions in planar channelling are analysed, explained and discussed with the perspective of defect measurement in crystals.
Abstract：We reports a phase-space structure of MeV proton beam planar channelled along {110} planes in Si crystal using simulation results with the help of a computer code FLUX. The aim is to understand channelling conditions suitable for disorder measurement in crystals. Phase-space distribution of a planar channelled proton beam evolutes in a systematic fashion when it travels into the crystal. Planar channelled beam oscillates between phase-like and space-like conditions in which a part of the beam becomes under phase and space criticalities. These criticality conditions in planar channelling are analysed, explained and discussed with the perspective of defect measurement in crystals.
Mukhtar Ahmed Rana. Planar Channelling Criticalities of MeV Protons in Si Crystal: Simulations, Evaluation and Applications[J]. 中国物理快报, 2008, 25(10): 3724-3727.
Mukhtar Ahmed Rana. Planar Channelling Criticalities of MeV Protons in Si Crystal: Simulations, Evaluation and Applications. Chin. Phys. Lett., 2008, 25(10): 3724-3727.
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2008, Vol. 25 
