VUV/UV/X-Ray Excited Luminescent Properties of Eu3+ nd Pr3+ Doped BiSbO4
LI Hui-Liang1,2, WANG Xiao-Jun1,2, YUAN Jun-Lin1,2, ZHAO Jing-Tai1, YANG Xin-Xin1,2, ZHANG Zhi-Jun1,2, CHEN Hao-Hong1,2, ZHANG Guo-Bin3, SHI Chao-Shu3
1State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 2000502Graduate School of Chinese Academy of Sciences, Beijing 1000493National Synchrotron Radiation Laboratory, University of Science and Technology of China, Heifei 230026
VUV/UV/X-Ray Excited Luminescent Properties of Eu3+ nd Pr3+ Doped BiSbO4
LI Hui-Liang1,2, WANG Xiao-Jun1,2, YUAN Jun-Lin1,2, ZHAO Jing-Tai1, YANG Xin-Xin1,2, ZHANG Zhi-Jun1,2, CHEN Hao-Hong1,2, ZHANG Guo-Bin3, SHI Chao-Shu3
1State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 2000502Graduate School of Chinese Academy of Sciences, Beijing 1000493National Synchrotron Radiation Laboratory, University of Science and Technology of China, Heifei 230026
Absorption spectra of BiSbO4 are studied. The electronic structure calculated by the DFT shows that BiSbO4 is a semiconductor, with direct band gap 2.96 eV, which is consistent with UV-visible diffuse reflectance experiment. The host lattice emission band is located at 440 nm under VUV excitation. Eu3+ and Pr3+ doped samples have high luminescence efficiency in emitting red and green light, respectively. From the partial density of states, Eu3+ doped emitting spectrum, and the host crystal structure parameters, the relationship between structure and optical properties is discussed. It is found that the Eu3+ ions occupied Bi3+ sites, and there could be an energy transfer from Bi3+ ions to RE3+ ions.
Absorption spectra of BiSbO4 are studied. The electronic structure calculated by the DFT shows that BiSbO4 is a semiconductor, with direct band gap 2.96 eV, which is consistent with UV-visible diffuse reflectance experiment. The host lattice emission band is located at 440 nm under VUV excitation. Eu3+ and Pr3+ doped samples have high luminescence efficiency in emitting red and green light, respectively. From the partial density of states, Eu3+ doped emitting spectrum, and the host crystal structure parameters, the relationship between structure and optical properties is discussed. It is found that the Eu3+ ions occupied Bi3+ sites, and there could be an energy transfer from Bi3+ ions to RE3+ ions.
[1] Blasse G 1988 Prog. Solid State Chem. 18 79 [2] Fischer P and Waldner F 1982 Solid State Commun. 44 657 [3] Barbier J, Greedan J.E, Asaro T and McCarthy G J 1990Eur. J. Solid State Inorg. Chem. 27 855 [4] Duffy J A and Ingram M D 1970 J. Chem. Phys. 523752 [5] Hernandez J 2001 J. Alloy Compd. 323 714 [6] Blasse G 1988 Prog. Solid State Chem. 18 79 [7] Kennedy B J 1994 Powder Diffr. 9 164 [8] Segall M, Linda P, M. Probert, Pickard C, Hasnip P, ClarkS, and Payne M, 2002 CASTEP Version 2.2. Materials Studio [9] Segall M, Linda P, Probert M, Pickard C, Hasnip P, Clark Sand Payne M 2002 J. Phys: Condens. Matter. 14 2717 [10] Butler M A 1977 J, Appl. Phys. 48 1914 [11] Shinonoya S and Yen W M 2000 The Phosphor Handbook(Boca Raton, FL: CRC Press) p 141 [12] Agannathan R and Kottaisamy M 1995 J. Phys: Condens.Matter. 7 8453 [13] Judd B R 1962 Phys. Rev. 127 750 [14] Ofelt G S 1962 J. Chem. Phys. 37 511 [15] Lopez F J and Moya E 1990 Solid State Commun. 76 1169 [16] Luo L et al 2005 Chin. Phys. Let. 22 132 [17] Gillespie R J 1972 Molecular Geometry (London: VanNostrand Reinhold)
2008, Vol. 25 
